Focused-Ion-Beam Surface Modification for Selective Growth of InP Wires on GaAs
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概要
- 論文の詳細を見る
A novel method for selective, maskless deposition of InP on GaAs has been developed. This method combines focused-ion-beam (FIB) implantation of a GaAs substrate followed by hydride vapor phase epitaxy (VPE) of Ink. The dependence of the selective growth mechanism on ion mass and dose is explored, and its cause is sought by examining the implanted surface with an atomic-force microscope (AFM). Since InP forms a single crystal with few defects, this new selective-epitaxy technique shows great promise for applications in quantum device fabrication.
- 社団法人応用物理学会の論文
- 1993-12-30
著者
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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Ochiai Yukinori
Fundamental Research Laboratories Nec Corporation
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AHOPELTO Jouni
Quantum Wave Project, ERATO, Research Development Corporation of Japan (JRDC)
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USUI Akira
Quantum Wave Project, ERATO, Research Development Corporation of Japan (JRDC)
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LEZEC Henri
Fundamental Research Laboratories, NEC Corporation
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Lezec Henri
Fundamental Research Laboratories Nec Corporation
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Usui Akira
Quantum Wave Project Erato Reseach Development Corporation Of Japan (jrdc)
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Usui Akira
Quantum Wave Project Erato Research Development Corporation Of Japan (jrdc)
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AHOPELTO Jouni
VTT Electronics
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Ahopelto J
Vtt Electronics
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Ahopelto Jouni
Quantum Wave Project Erato Research Development Corporation Of Japan (jrdc)
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