Sub-10-nm-Scale Lithography Using $p$-chloromethyl-methoxy-calix[4]arene Resist
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概要
- 論文の詳細を見る
We examined the properties of $p$-chloromethyl-methoxy-calix[4]arene (CMC4) as a high-resolution negative-tone resist for electron-beam (EB) lithography. CMC4's highest resolution was less than 8 nm, and of the calixarene resists studied so far, it has the highest solubility in Cl-free solvents. Comparison with the $p$-chloromethyl-methoxy-calix[6]arene (CMC6) resist revealed that the CMC4 resist's low molecular weight and low crystallinity were the origin of its high resolution and high solubility.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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FUJITA Jun-ichi
Fundamental Res. Labs., NEC Corporation
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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Ogura Takashi
Silicon Systems Research Laboratories Nec Corporation
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Ishida Masahiko
Fundamental And Environmental Research Laboratories Nec Corporation
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OHSHIMA Eiji
Tsukuba Research Laboratories, Tokuyama Corp.
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MOMODA Junji
Tsukuba Research Laboratories, Tokuyama Corp.
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Ochiai Yukinori
Fundamental Research Laboratories, NEC Corp., 34 Miyukigaoka, Tsukuba 305-8501, Japan
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Fujita Jun-ichi
Fundamental Research Laboratories, NEC Corp., 34 Miyukigaoka, Tsukuba 305-8501, Japan
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Ohshima Eiji
Tsukuba Research Laboratories, Tokuyama Corp., 40 Wadai, Tsukuba 300-4247, Japan
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Ishida Masahiko
Fundamental Research Laboratories, NEC Corp., 34 Miyukigaoka, Tsukuba 305-8501, Japan
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Ogura Takashi
Silicon Systems Research Laboratories, NEC Corp., 1120 Shimokuzawa Sagamihara, Kanagawa 229-1198, Japan
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