Low-Temperature Electron-Beam-Assisted Dry Etching for GaAs Using Electron-Stimulated Desorption
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概要
- 論文の詳細を見る
Low-temperature electron-beam(EB)-assisted dry etching for GaAs is developed to achieve highly anisotropic etching by reducing the side-etching caused by Cl_2 gas etching. An extremely high etching rate ratio (EB-assisted etching/Cl_2 gas etching) is achieved at a substrate temperature of -170℃. The mass spectra of the etching products during EB-assisted dry etching and Cl_2 gas etching are measured. These correlate well with etching rate measurements.
- 社団法人応用物理学会の論文
- 1992-06-15
著者
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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Watanabe Heiji
Fundamental Research Laboratories Nec Corporation
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