Cl Atom Desorption by Chemical Reaction with Al Atom on Si(111) 7 × 7 Studied by Scanning Tunneling Microscopy
スポンサーリンク
概要
- 論文の詳細を見る
The chemical reactivity of Al-Cl and Cl-Si atoms has been studied by in-situ scanning tunneling microscopy (STM). Cl atoms are first adsorbed at room temperature on a Si(111) 7 × 7 surface in an ultra-high vacuum STM. Next, Al atoms are evaporated on this surface. As a result, the Al atoms desorb the Cl atoms from the Si surface, because Cl atoms react more strongly with Al atoms than with Si adatoms.
- 社団法人応用物理学会の論文
- 1996-12-30
著者
-
MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
-
BABA Masakazu
Fundamental Research Laboratories, NEC Corporation
-
Baba Masakazu
Fundamental Research Laboratories Nec Corporation
関連論文
- Nanometer-Scale Patterning of Polystyrene Resists in Low-Voltage Electron Beam Lithography
- Calixarene Electron Beam Resist for Nano-Lithography
- Resolution-Limit Study of Chain-Structure Negative Resist by Electron Beam Lithography
- FIB Exposure Characteristics of LB Film
- Fabrication and Magnetotransport of One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Ion Irradiation
- Self-Developing Properties of an Inorganic Electron Beam Resist and Nanometer-Scale Patterning Using a Scanning Electron Beam
- Electron-Stimulated Desorption and in situ Scanning Electron Microscopy Study on Self-Developing Reaction of High-Resolution Inorganic Electron Beam Resist
- Nanometer-Scale Direct Carbon Mask Fabrication Usirng Electron-Beam-Assisted Deposition
- Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound Semiconductor
- Measurement of Sidewall Roughness by Scanning Tunneling Microscope : Inspection and Testing
- Measurement of Sidewall Roughness by Scanning Tunneling Microscope
- Reverse Dry Etching Using a High-Selectivity Carbon Mask Formed by Electron Beam Deposition
- GaAs Dry Etching Using Electron Beam Induced Surface Reaction
- Cl Atom Desorption by Chemical Reaction with Al Atom on Si(111) 7 × 7 Studied by Scanning Tunneling Microscopy
- Nanostructure Fabrication by Scanning Tunneling Microscope : Microfabrication and Physics
- Nanostructure Fabrication by Scanning Tunneling Microscope
- Superconducting Lines Fabricated from Epitaxial Y-Ba-Cu-O Films : High Temperature Superconducting Thin-Films(Solid State Devices and Materials 1)
- YBa_2Cu_3O_y Superconducting Thin Film Obtained by Laser Annealing : Electrical Properties of Condensed Matter
- Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation
- An Approach for Nanolithography Using Electron Holography
- Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
- Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System : Micro/nanofabrication and Devices
- Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System
- Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching
- Nanolithography Using a Chemically Amplified Negative Resist by Electron Beam Exposure
- Focused Ion Beam Lithography Using Novolak-Based Resist : Techniques, Instrumentations and Measurement
- Fabrication of Y-Cu Liquid Metal Ion Sources : Techniques, Instrumentations and Measurement
- Etching Characteristics for Organosilica
- Low-Temperature Electron-Beam-Assisted Dry Etching for GaAs Using Electron-Stimulated Desorption
- Electron Beam Irradiation Effects on Cl_2/GaAs
- GaAs Dry Etching Using Electron Beam Induced Surface Reaction : Etching
- New Selective Deposition Technology by Electron Beam Induced Surface Reaction