New Selective Deposition Technology by Electron Beam Induced Surface Reaction
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概要
- 論文の詳細を見る
A new selective deposition technology by electron beam induced surface reaction has been demonstrated. Cr line patterns were deposited using Cr(C_6H_6)_2 as a source. Cr deposition was confirmed by analysis using XMA and AES. The deposited thickness is proportional to electron beam dose. A 0.15 μm linewidth Cr pattern was deposited at 5×10^<-7> C/cm. This technology will be important for nanometer structure fabrication and new structure devices.
- 社団法人応用物理学会の論文
- 1984-09-20
著者
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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MORI Katsumi
Fundamental Research Laboratories, NEC Corporation
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Mori Katsumi
Fundamental Research Laboratories
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Mori Katsumi
Fundamental Research Laboratories Nec Corporation
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