Etching Characteristics for Organosilica
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概要
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Organosilica etching characteristics are described. The organosilica films are obtained by spin-coating, followed by baking at less than 200℃ temperatures. The wet chemical etch rate for organosilica is 200 times faster than that for thermally grown SiO_2. The etch rate, including the physical sputter effect in a plasma, is a little more than twice that. The organosilica etch rate ratios to organic resist materials show an accurate pattern transfer for reactive sputter etching. The organosilica is also applicable to the intermediate layer in the tri-level resist process.
- 社団法人応用物理学会の論文
- 1983-02-20
著者
-
MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
-
Endo Nobuhiro
Microelectronics Research Laboratories
-
Matsui Shinji
Fundamental Research Laboratories Nippon Electric Co. Ltd.
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