Local Loading Effect in Selective Silicon Epitaxy
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概要
- 論文の詳細を見る
In selective epitaxy, growth rate is modified by the ratio of unmasked area to entire surface area and by each window area on a wafer. Such "local loading effect" phenomena were studied in a SiH_2Cl_2/HCl/H_2 selective epitaxial growth system. The effect is attributed to species spatial concentration variation which is generated by coexistence of a masked area and windows on a wafer. The growth condition which can suppress the effect is obtained for VLSI device fabrication.
- 社団法人応用物理学会の論文
- 1984-06-20
著者
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Tsuya Hideki
Fundamental Research Laboratories Nec Corporation
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Tsuya Hideki
Fundamental Research Laboratories
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ENDO Nobuhiro
Microelectronics Research Laboratories, Nippon Electric Co., Ltd.
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ISHITANI Akihiko
Fundamental Research Laboratories, NEC Corporation
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Endo Nobuhiro
Microelectronics Research Laboratories Nec Corporation
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Endo Nobuhiro
Microelectronics Research Laboratories
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Ishitani Akihiko
Fundamental Research Laboratories Nec Corporation
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