Crystalline Defects in Selectively Epitaxial Silicon Layers

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概要

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• Crystalline defects in selectively epitaxial silicon layers have been studied as a function of growth parameters, especially growth temperature and HCl flow rate injected in the SiH_2Cl_2-H_2 system, for (100)- and (111)-substrates. Defects, which were mostly pairs of stacking faults, were observed along the sidewall. The defect density in the epitaxial layer decreased with both increasing HCl flow rate and decreasing growth temperature. Electrical property of the epitaxial layer was also improved with decreasing growth temperature.

• 社団法人応用物理学会の論文
• 1983-12-20

著者

• Endo N

  Ntt Lsi Lab. Kanagawa Jpn

• TANNO Kohetsu

  Fundamental Research Laboratories

• KITAJIMA Hiroshi

  Fundamental Research Laboratories

• Ishitani A

  O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat

• Kitajima H

  Forestry And Forest Products Research Institute

• Endo Nobuhiro

  Microelectronics Research Laboratories

• Tanno Kohetsu

  Fundamental Research Laboratories:(present Address) 1st Lsi Division Nec Dorporation Ltd.

• Ishitani Akihiko

  Fundamental Research Laboratories Nec Corporation

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