Ishitani Akihiko | Fundamental Research Laboratories Nec Corporation
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概要
関連著者
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Endo Nobuhiro
Microelectronics Research Laboratories
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Ishitani Akihiko
Fundamental Research Laboratories Nec Corporation
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Endo N
Ntt Lsi Lab. Kanagawa Jpn
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KITAJIMA Hiroshi
Fundamental Research Laboratories
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Ishitani A
O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat
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Kasai Naoki
Microelectronics Research Laboratories Nec Corporation
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Kitajima H
Forestry And Forest Products Research Institute
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Kimura M
Murata Mfg. Co. Ltd.
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Kasai N
Aist Ibaraki Jpn
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Miyamura Kazuo
Department Of Applied Chemistry Faculty Of Engineering The University Of Tokyo
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Tsuya Hideki
Fundamental Research Laboratories Nec Corporation
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Tsuya Hideki
Fundamental Research Laboratories
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Kimura Masakazu
Fundamental Research Laboratories Nec Corporation
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TANNO Kohetsu
Fundamental Research Laboratories
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ENDO Nobuhiro
Microelectronics Research Laboratories, Nippon Electric Co., Ltd.
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ISHITANI Akihiko
Fundamental Research Laboratories, NEC Corporation
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Endo Nobuhiro
Microelectronics Research Laboratories Nec Corporation
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Tanno Kohetsu
Fundamental Research Laboratories:(present Address) 1st Lsi Division Nec Dorporation Ltd.
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KIMURA Masakazu
VLSI Development Division, NEC Corporation
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HAMAGUCHI Tsuneo
Research and Development Planning and Technical Service Division, NEC Corporation
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Hamaguchi Tsuneo
Research And Development Planning And Technical Service Division Nec Corporation
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Ishitani Akihiko
Fundamental Research Laboratories, NEC Corporation, 1-1 Miyazaki 4-chome, Miyamae-ku, Kawasaki 213
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Kitajima Hiroshi
Fundamental Research Laboratories, NEC Corporation, 1-1 Miyazaki 4-chome, Miyamae-ku, Kawasaki 213
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Kasai Naoki
Microelectronics Research Laboratories, NEC Corporation, 1-1 Miyazaki 4-chome, Miyamae-ku, Kawasaki 213
著作論文
- Local Loading Effect in Selective Silicon Epitaxy
- Silicon Selective Epitaxial Growth over Thick SiO_2 Islands
- Facet Formation in Selective Silicon Epitaxial Growth
- Device Layer Transfer Technique using Chemi-Mechanical Polishing
- Crystalline Defects in Selectively Epitaxial Silicon Layers
- Silicon Selective Epitaxial Growth and Electrical Properties of Epi/Sidewall Interfaces