Facet Formation in Selective Silicon Epitaxial Growth
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概要
- 論文の詳細を見る
Facets observed adjacent to insulator films in selective silicon epitaxial growth were studied. The facet formation depended on the crystallographic orientation of the openings, and facets did not appear adjacent to the Sin. sidewall parallel to the [100] direction. Facet formation could also be suppressed by using a polysilicon-coated sidewall. Defectsin the selective epi-layers were examined using transmission electron microscopy, and facet-free and defect-free epi-layers were obtained.
- 社団法人応用物理学会の論文
- 1985-10-20
著者
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Kasai N
Aist Ibaraki Jpn
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Endo N
Ntt Lsi Lab. Kanagawa Jpn
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Kasai Naoki
Microelectronics Research Laboratories Nec Corporation
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KITAJIMA Hiroshi
Fundamental Research Laboratories
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Ishitani A
O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat
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Kitajima H
Forestry And Forest Products Research Institute
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Endo Nobuhiro
Microelectronics Research Laboratories
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Ishitani Akihiko
Fundamental Research Laboratories Nec Corporation
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