Silicon Selective Epitaxial Growth over Thick SiO_2 Islands

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概要

• 論文の詳細を見る

• Silicon selective epitaxial overgrowth from a seed area to thick SiO_2 islands top surface using chemical vapor deposition method was studied. A single crystal silicon layer on SiO_2 islands without stacking faults was obtained on {100} and {110} oriented wafers. Lateral to vertical growth ratio is influenced by the substrate orientation and the striped pattern sidewall orientation. Facet planes appearing at a lateral growth front are caused by the growth rate anisotropy.

• 社団法人応用物理学会の論文
• 1987-05-20

著者

• Kimura M

  Murata Mfg. Co. Ltd.

• Kasai N

  Aist Ibaraki Jpn

• Endo N

  Ntt Lsi Lab. Kanagawa Jpn

• Miyamura Kazuo

  Department Of Applied Chemistry Faculty Of Engineering The University Of Tokyo

• Kasai Naoki

  Microelectronics Research Laboratories Nec Corporation

• KITAJIMA Hiroshi

  Fundamental Research Laboratories

• Ishitani A

  O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat

• Kitajima H

  Forestry And Forest Products Research Institute

• Endo Nobuhiro

  Microelectronics Research Laboratories

• Ishitani Akihiko

  Fundamental Research Laboratories Nec Corporation

• KIMURA Masakazu

  VLSI Development Division, NEC Corporation

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