Device Layer Transfer Technique using Chemi-Mechanical Polishing
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概要
- 論文の詳細を見る
A device layer transfer technique, a new technique for transferring a thin device layer fabricated on the silicon wafer onto an insulating substrate, is described. The fundamental processes supporting this technique are wafer thinning using chemi-mechanical polishing and wafer fastening. A 2 μm-thick device layer with a 2 inch diameter is formed on a quartz glass substrate without significant degradation in transistor characteristics.
- 社団法人応用物理学会の論文
- 1984-10-20
著者
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Kimura M
Murata Mfg. Co. Ltd.
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Endo N
Ntt Lsi Lab. Kanagawa Jpn
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Miyamura Kazuo
Department Of Applied Chemistry Faculty Of Engineering The University Of Tokyo
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Kimura Masakazu
Fundamental Research Laboratories Nec Corporation
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Ishitani A
O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat
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Endo Nobuhiro
Microelectronics Research Laboratories
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Ishitani Akihiko
Fundamental Research Laboratories Nec Corporation
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HAMAGUCHI Tsuneo
Research and Development Planning and Technical Service Division, NEC Corporation
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Hamaguchi Tsuneo
Research And Development Planning And Technical Service Division Nec Corporation
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