Ishitani A | O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat
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- Ishitani Akihikoの詳細を見る
- 同名の論文著者
- O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporatの論文著者
関連著者
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Ishitani A
O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat
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ISHITANI Akihiko
ULSI Device Development Laboratories, NEC Corporation
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Ishitani Akihiko
Ulsi Device Development Laboratories Nec Corporation
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SAMUKAWA Seiji
Institute of Fluid Science, Tohoku University
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Nakamura T
Hokkaido Univ. Sapporo Jpn
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Samukawa S
Tohoku Univ. Sendai Jpn
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Samukawa Seiji
Process Development Department Vlsi Development Division Nec Corporation
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Samukawa Seiji
Vlsi Development Div. Nec Corporation
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Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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Endo N
Ntt Lsi Lab. Kanagawa Jpn
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Endo Nobuhiro
Microelectronics Research Laboratories
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Ishitani Akihiko
Fundamental Research Laboratories Nec Corporation
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NAKAMURA Tsuyoshi
Mechatronics Research Laboratry, Functional Devices Research Laboratories, NEC Corporation
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Ishida Tadashi
National Institute Of Advanced Industrial Science And Technology
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Ishida Toshimasa
Research Laboratory Oki Electric Industry Co. Lid
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Ishida Takayuki
Department Of Radiology National Federation Of Health Insurance Societies Osaka Chuo Hospital
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Ishida T
Department Of Physics Faculty Of Science Ibaraki University
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Nakamura Tsuyoshi
Mechatronics Research Laboratry Functional Devices Research Laboratories Nec Corporation
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KITAJIMA Hiroshi
Fundamental Research Laboratories
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Kitajima H
Forestry And Forest Products Research Institute
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Nakamura Tsuyoshi
Mechatronics Research Laboratory Nec Corporation
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ISHIDA Toshinori
Mechatronics Research Laboratry, Functional Devices Research Laboratories, NEC Corporation
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SAMUKAWA Seiji
VLSI Development Division, NEC Corporation
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ISHITANI Akihiko
VLSI Development Division, NEC Corporation
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LESAICHERRE Pierre-Yves
ULSI Device Development Laboratories, NEC Corporation
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Kimura M
Murata Mfg. Co. Ltd.
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Kamiyama S
Silicon Systems Research Laboratories Nec Corporation
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Kamiyama Satoshi
Ulsi Device Development Laboratories Nec Corporation
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Mochizuki Yasunori
Institute Of Industrial Science University Of Tokyo
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Mochizuki Yasuhiro
Hitachi Research Laboratory Hitachi Ltd.
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Lesaicherre Pierre-yves
Ulsi Device Development Laboratories Nec Corporation
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Lesaicherre P‐y
Ulsi Device Development Laboratories Nec Corporation
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Kasai N
Aist Ibaraki Jpn
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Takada T
New Cosmos Electric Co. Ltd. Osaka Jpn
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Miyamura Kazuo
Department Of Applied Chemistry Faculty Of Engineering The University Of Tokyo
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Mochizuki Yuji
Fundamental Research Laboratories Nec Corporation
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Kasai Naoki
Microelectronics Research Laboratories Nec Corporation
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TAKADA Toshikazu
Fundamental Research Laboratories, NEC Corporation
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Takada Toshikazu
Fundamental Research Laboratories Nec Corporation
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Ishitani Akihiko
Vlsi Development Division Nec Corporation
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Kamiyama Satoshi
Faculty of Science and Technology, Meijo University
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Kamiyama Satoshi
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University
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Oizumi H
Hitachi Ltd. Tokyo Jpn
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Oizumi H
Aset Euvl Lab. Kanagawa Jpn
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Oizumi Hiroaki
Sortec Corporation
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SAMUKAWA Seiji
Microelectronics Research Laboratories, NEC Corporation
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NAKAMURA Tsuyoshi
FA Development Laboratories, NEC Corporatton
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ISHIDA Toshinori
FA Development Laboratories, NEC Corporatton
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SAMUKAWA Seiji
Process Development Department, VLSI Development Division, NEC Corporation
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ISHITANI Akihiko
Process Development Department, VLSI Development Division, NEC Corporation
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KAWASE Yutaka
Mechatronics Research Laboratry, Functional Devices Research Laboratories, NEC Corporation
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Ando K
Kyushu Sangyo Univ. Fukuoka‐shi Jpn
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MATSUZAWA Nobuyuki
Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c
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OIZUMI Hiroaki
o NTT Atsugi R&D Center
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MORI Shigeyasu
Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c
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IRIE Shigeo
o NTT Atsugi R&D Center
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SHIRAYONE Shigeru
Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c
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YANO Ei
o NTT Atsugi R&D Center
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OKAZAKI Shinji
Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c
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ISHITANI Akihiko
o NTT Atsugi R&D Center
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DIXON David
Atsugi Research Center, Association of Super-Advanced Electronics Technologies (ASET), c
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Watanabe Hirohito
Ulsi Device Development Laboratories Nec Corporation
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Mori S
Department Of Electric And Electrical Engineering School Of Science And Engineering Saga University
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OKAMOTO Yasuharu
Fundamental Research Laboratories, NEC Corporation
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Ohta Noriko
Nec Scientific Information System Development Ltd.
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Hirose K
Inst. Space And Astronautical Sci. Kanagawa Jpn
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YANO Ei
Fujitsu Laboratories Ltd.
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Ando K
Graduate School Of Life And Environmental Sciences University Of Tsukuba
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Dixon David
Atsugi Research Center Association Of Super-advanced Electronics Technologies (aset) C
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Irie S
Semiconductor Leading Edge Technologies Ibaraki Jpn
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Irie Shigeo
Semiconductor Leading Edge Technologies Inc. (selete)
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Kawase Yutaka
Mechatronics Research Laboratry Functional Devices Research Laboratories Nec Corporation
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Okazaki S
Assoc. Super‐advanced Electronics Technol. Kanagawa Pref. Jpn
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Suzuki Hiroshi
ULSI Device Development Laboratories, NEC Corporation
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Ando Koichi
ULSI Device Development Laboratories, NEC Corporation
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Hirose Kazuyuki
Ulsi Device Development Laboratories Nec Corporation
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Kimura Masakazu
Fundamental Research Laboratories Nec Corporation
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TANNO Kohetsu
Fundamental Research Laboratories
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Okamoto Yasuharu
Fundamental Research Laboratories Nec Corporation
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Yokozawa Ayumi
Ulsi Device Development Labs. Nec Corporation
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Matsuzawa N
Assoc. Super‐advanced Electronics Technol. Kanagawa Pref. Jpn
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Tanno Kohetsu
Fundamental Research Laboratories:(present Address) 1st Lsi Division Nec Dorporation Ltd.
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KIMURA Masakazu
VLSI Development Division, NEC Corporation
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HAMAGUCHI Tsuneo
Research and Development Planning and Technical Service Division, NEC Corporation
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Hamaguchi Tsuneo
Research And Development Planning And Technical Service Division Nec Corporation
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Samukawa Seiji
Microelectronics Research Laboratories Nec Corporation
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Shirayone S
Assoc. Super‐advanced Electronics Technol. Kanagawa Pref. Jpn
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Ishitani Akihiko
o NTT Atsugi R&D Center:(Permanant address)Semiconductor Company, Matsushita Electronics Corporation.
著作論文
- Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
- Multi-Coil System for Electron Cyclcotron Resonance Plasma Generation
- Uniform Electron Cyclotron Resonance Plasma Generation for Precise ULSI Patterning
- Dependence of Electron Cyclotron Resonance Plasma Characteristics on Introduced Microwave Conditions
- Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
- Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs (Special Issue on Quarter Micron Si Device and Process Technologies)
- Trends in Capacitor Dielectrics for DRAMs (Special Issue on LSI Memories)
- On the Reaction Scheme for Ti/TiN Chemical Vapor Deposition (CVD) Process Using TiCl_4
- Theoretical Studies on the Dielectric Breakdown of the SiO_2 Thin Films
- Silicon Selective Epitaxial Growth over Thick SiO_2 Islands
- Facet Formation in Selective Silicon Epitaxial Growth
- Device Layer Transfer Technique using Chemi-Mechanical Polishing
- Crystalline Defects in Selectively Epitaxial Silicon Layers