Lesaicherre P‐y | Ulsi Device Development Laboratories Nec Corporation
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概要
関連著者
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LESAICHERRE Pierre-Yves
ULSI Device Development Laboratories, NEC Corporation
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Lesaicherre Pierre-yves
Ulsi Device Development Laboratories Nec Corporation
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Lesaicherre P‐y
Ulsi Device Development Laboratories Nec Corporation
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ISHITANI Akihiko
ULSI Device Development Laboratories, NEC Corporation
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Ishitani Akihiko
Ulsi Device Development Laboratories Nec Corporation
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Yoshida M
Functional Materials Research Laboratories Nec Corporation
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YOSHIDA Masaji
Fundamental Research Laboratories, NEC Corporation
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Yoshida M
Yoshida Semiconductor Lab. Fukuoka Jpn
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Kamiyama S
Silicon Systems Research Laboratories Nec Corporation
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Kamiyama Satoshi
Ulsi Device Development Laboratories Nec Corporation
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Yoshida M
National Institute Of Advanced Industrial And Science Technology (aist)
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Yoshida Masaji
Fundamental Research Laboratories Nec Corporation
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Yamaguchi H
Ntt Basic Research Laboratories
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Ishitani A
O Ntt Atsugi R&d Center:(permanant Address)semiconductor Company Matsushita Electronics Corporat
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Kamiyama Satoshi
Faculty of Science and Technology, Meijo University
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Kamiyama Satoshi
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University
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YABUTA Hisato
Department of Quantum Matter, ADSM, Hiroshima University
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Ando K
Kyushu Sangyo Univ. Fukuoka‐shi Jpn
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IIZUKA Toshihiro
ULSI Device Development Laboratory, NEC Corporation
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YAMAMICHI Shintaro
Functional Materials Research Laboratories, NEC Corporation
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YAMAGUCHI Hiromu
ULSI Device Development Laboratory, NEC Corporation
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SONE Shuji
ULSI Device Development Laboratory, NEC Corporation
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YABUTA Hisato
Fundamental Research Laboratories, NEC Corporation
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SONE Shuji
Fundamental Research Laboratories, NEC Corporation
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KATO Yoshitake
Fundamental Research Laboratories, NEC Corporation
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YAMAMICHI Shintaro
ULSI Device Development Laboratories, NEC Corporation
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NISHIMOTO Shozo
ULSI Device Development Laboratories, NEC Corporation
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YAMAGUCHI Hiromu
Fundamental Research Laboratories, NEC Corporation
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SAKUMA Toshiyuki
Fundamental Research Laboratories, NEC Corporation
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MIYASAKA Yoichi
Fundamental Research Laboratories, NEC Corporation
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Yabuta Hisato
Department Of Quantum Matter Adsm Hiroshima University
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Watanabe Hirohito
Ulsi Device Development Laboratories Nec Corporation
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YOSHIDA Masayuki
Kyushu Institute of Design
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Yoshida Masayoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Yamamichi Shintaro
Functional Materials Research Laboratories Nec Corporation
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Yamamichi Shintaro
Fundamental Research Laboratories Nec Corporation
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Yamamichi Shintaro
Ulsi Device Development Laboratories Nec Corporation
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Sone S
Ulsi Device Development Laboratory Nec Corporation
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Ando K
Graduate School Of Life And Environmental Sciences University Of Tsukuba
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Kato Y
Ulsi Device Development Laboratory Nec Corporation:(present Address)advanced Process R&d And Str
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Kato Yoshitake
Fundamental Research Laboratories Nec Corporation
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Suzuki Hiroshi
ULSI Device Development Laboratories, NEC Corporation
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Ando Koichi
ULSI Device Development Laboratories, NEC Corporation
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Yashiro M
Univ. Tokyo Tokyo
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Sakuma Toshiyuki
Fundamental Research Laboratories Nec Corporation
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Yamaguchi Hiromu
Fundamental Research Laboratories Nec Corporation
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Iizuka Toshihiro
Ulsi Device Development Laboratory Nec Corporation
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Nishimoto Shozo
Ulsi Device Development Laboratories Nec Corporation
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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YAMAGUCHI Hiromu
ULSI Device Development Laboratories, NEC Corporation
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Iizuka Toshihiro
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
著作論文
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs (Special Issue on Quarter Micron Si Device and Process Technologies)
- Trends in Capacitor Dielectrics for DRAMs (Special Issue on LSI Memories)