SONE Shuji | ULSI Device Development Laboratory, NEC Corporation
スポンサーリンク
概要
関連著者
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SONE Shuji
ULSI Device Development Laboratory, NEC Corporation
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Yamamichi Shintaro
Fundamental Research Laboratories Nec Corporation
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Sone S
Ulsi Device Development Laboratory Nec Corporation
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YABUTA Hisato
Department of Quantum Matter, ADSM, Hiroshima University
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Yoshida M
Functional Materials Research Laboratories Nec Corporation
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ARITA Koji
ULSI Device Development Laboratory, NEC Corporation
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YAMAMICHI Shintaro
Functional Materials Research Laboratories, NEC Corporation
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KATO Yoshitake
ULSI Device Development Laboratory, NEC Corporation
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YABUTA Hisato
Fundamental Research Laboratories, NEC Corporation
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Yabuta Hisato
Department Of Quantum Matter Adsm Hiroshima University
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Yoshida M
Yoshida Semiconductor Lab. Fukuoka Jpn
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YOSHIDA Masayuki
Kyushu Institute of Design
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Yoshida Masayoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Yamamichi Shintaro
Functional Materials Research Laboratories Nec Corporation
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Yoshida M
National Institute Of Advanced Industrial And Science Technology (aist)
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Kato Y
Ulsi Device Development Laboratory Nec Corporation:(present Address)advanced Process R&d And Str
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Yoshida Masaji
Fundamental Research Laboratories Nec Corporation
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Yashiro M
Univ. Tokyo Tokyo
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Arita Koji
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Kato Yoshitake
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Sone Shuji
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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YOSHIDA Masaji
Fundamental Research Laboratories, NEC Corporation
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Arita K
Waseda Univ. Tokyo Jpn
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Akahane Reiko
Fundamental Research Laboratories Nec Corporation:(present Address)functional Materials Laboratories
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Arita K
Ulsi Device Development Laboratory Nec Corporation
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IIZUKA Toshihiro
ULSI Device Development Laboratory, NEC Corporation
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YAMAGUCHI Hiromu
ULSI Device Development Laboratory, NEC Corporation
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AKAHANE Reiko
Fundamental Research Laboratories, NEC Corporation
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YAMAMICHI Shintaro
Fundamental Research Laboratories, NEC Corporation
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Yamaguchi H
Ntt Basic Research Laboratories
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Iizuka Toshihiro
Ulsi Device Development Laboratory Nec Corporation
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YAMAGUCHI Hiromu
ULSI Device Development Laboratories, NEC Corporation
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Iizuka Toshihiro
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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YASUDA Kazuhito
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Matsuki T
Ulsi Device Development Laboratory Nec Corporation
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YAMAMOTO Ichiro
ULSI Device Development Laboratory, NEC Corporation
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MATSUKI Takeo
ULSI Device Development Laboratory, NEC Corporation
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YABUTA Hisato
Functional Materials Research Laboratories, NEC Corporation
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MIYASAKA Yoichi
Functional Materials Research Laboratories, NEC Corporation
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SONE Shuji
Fundamental Research Laboratories, NEC Corporation
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KATO Yoshitake
Fundamental Research Laboratories, NEC Corporation
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YAMAMICHI Shintaro
ULSI Device Development Laboratories, NEC Corporation
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LESAICHERRE Pierre-Yves
ULSI Device Development Laboratories, NEC Corporation
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NISHIMOTO Shozo
ULSI Device Development Laboratories, NEC Corporation
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Yamamichi Shintaro
Ulsi Device Development Laboratories Nec Corporation
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Lesaicherre Pierre-yves
Ulsi Device Development Laboratories Nec Corporation
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Lesaicherre P‐y
Ulsi Device Development Laboratories Nec Corporation
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Ekawa Mitsuru
Department Of Electrical Engineering Faculty Of Engineering Osaka University:(present Address) Depar
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Ekawa Mitsuru
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Kato Yoshitake
Fundamental Research Laboratories Nec Corporation
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Tanaka Akikazu
Electronics Materials Laboratory Sumitomo Metal Mining Co. Ltd.
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MATSUI Nobuyuki
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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SONE Syuji
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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SUGIURA Yoshiyuki
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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SAJI Manabu
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Matsuki Takeo
Ulsi Device Development Laboratory Nec Corporation
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Yasuda Kazuhito
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Saji M
Nagoya Inst. Technol. Aichi Jpn
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Saji Manabu
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Sugiura Yoshiyuki
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Matsui N
Hyogo Univ.
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Nishimoto Shozo
Ulsi Device Development Laboratories Nec Corporation
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Matsui Nobuyuki
Department Of Computer Engineering Himeji Institute Of Technology
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Yamamoto Ichiro
Ulsi Device Development Laboratories Nec Corporation
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Yamamoto Ichiro
Ulsi Device Development Laboratory Nec Corporation
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Yabuta Hisato
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan
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Yamamichi Shintaro
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan
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Akahane Reiko
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan
著作論文
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Growth Characteristics and Electrical Properties of (100) CdTe Layers Grown on (100) GaAs by Low-Pressure Organometallic Vapor Phase Epitaxy
- Electrical Properties of (Ba, Sr)TiO3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing