SONE Shuji | ULSI Device Development Laboratory, NEC Corporation
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概要
関連著者
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SONE Shuji
ULSI Device Development Laboratory, NEC Corporation
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Yamamichi Shintaro
Fundamental Research Laboratories Nec Corporation
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Sone S
Ulsi Device Development Laboratory Nec Corporation
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YABUTA Hisato
Department of Quantum Matter, ADSM, Hiroshima University
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Yoshida M
Functional Materials Research Laboratories Nec Corporation
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ARITA Koji
ULSI Device Development Laboratory, NEC Corporation
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YAMAMICHI Shintaro
Functional Materials Research Laboratories, NEC Corporation
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KATO Yoshitake
ULSI Device Development Laboratory, NEC Corporation
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YABUTA Hisato
Fundamental Research Laboratories, NEC Corporation
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Yabuta Hisato
Department Of Quantum Matter Adsm Hiroshima University
著作論文
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Growth Characteristics and Electrical Properties of (100) CdTe Layers Grown on (100) GaAs by Low-Pressure Organometallic Vapor Phase Epitaxy
- Electrical Properties of (Ba, Sr)TiO3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing