Growth Characteristics and Electrical Properties of (100) CdTe Layers Grown on (100) GaAs by Low-Pressure Organometallic Vapor Phase Epitaxy

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The growth mechanism and electrical characteristics of (100) CdTe layers grown on (100) GaAs by low-pressure organometallic vapor phase epitaxy have been reported. The growth mechanism changed around the growth temperature of 400℃. Adduct pyrolysis dominated the growth below the temperature of 400℃. Above this temperature, a pyrolysis of DETe dominated the growth. High-quality p-type layers were obtained when the layers were grown thicker than 2 μm at 420℃. The hole density and the Hall hole mobility were in the ranges of 2.2-3.5×10^<15> cm^<-3> and 60-100 cm^2/V・s, respectively. In contrast to this, the grown layer became semi-insulating when the thickness was less than 2 μm due to out-diffusion of Ga from the substrates. The double crystal X-ray rocking curve also showed a FWHM value of 155 arcsec at the thickness of 6 μm.
社団法人応用物理学会の論文
1990-03-20