Strain-Induced Energy Shift of Photoluminescence Spectra in MOCVD-Grown ZnTe Films on (100) GaAs Substrates
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概要
- 論文の詳細を見る
It has been revealed that heteroepitaxial ZnTe films grown on (100) GaAs substrates by low-pressure metalorganic chemical vapour deposition (MOCVD) receive considerably biaxial tensile stress. In order to characterize the effect of strains on the optical properties, the dependence of the 2.32 eV donor-acceptor pair and oxygen-bound-exciton emissions on film thickness was investigated in the range of 1 to 8 μm. It was found that photoluminescence (PL) peaks shift toward the lower-energy side and that full-width at half-maximum (FWHM) values of both PL and X-ray diffraction peaks decrease with increasing film thickness, suggesting that the film quality significantly depends upon its thickness.
- 社団法人応用物理学会の論文
- 1989-08-20
著者
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Taguchi Tsunemasa
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Ekawa Mitsuru
Department Of Electrical Engineering Faculty Of Engineering Osaka University:(present Address) Depar
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Ekawa Mitsuru
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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