Exciton Binding Energies in Cd0.11Zn0.89S/Mg0.22Zn0.78S Quantum Wells Lattice-Matched to GaP Substrates
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概要
- 論文の詳細を見る
The exciton binding energy in Cd0.11Zn0.89S/Mg0.22Zn0.78S single quantum wells (SQWs) is calculated to study their exciton properties in detail. The heavy-hole exciton binding energy is larger than the light-hole exciton binding energy in narrow wells, because the degree of confinement of heavy-hole excitons is larger than that of light-hole excitons in these SQWs. The heavy- and light-hole exciton binding energies are found to increase owing to the image-charge effect when the well width is less than 5 nm.
- The Japan Society of Applied Physicsの論文
- 2009-09-25
著者
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Shoji Tadayoshi
Department Of Electronics Tohoku Institute Of Technology
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Yoshida Masaaki
Electronic Devices Company Ricoh Co. Ltd.
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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Shoji Tadayoshi
Department of Electronics, Tohoku Institute of Technology, Sendai 982-8577, Japan
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School, Towada, Aomori 034-0001, Japan
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Taguchi Tsunemasa
Department of Electrical and Electronic Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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