Exciton Binding Energies in Cd0.11Zn0.89S/Mg0.22Zn0.78S Quantum Wells Lattice-Matched to GaP Substrates

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概要

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• The exciton binding energy in Cd0.11Zn0.89S/Mg0.22Zn0.78S single quantum wells (SQWs) is calculated to study their exciton properties in detail. The heavy-hole exciton binding energy is larger than the light-hole exciton binding energy in narrow wells, because the degree of confinement of heavy-hole excitons is larger than that of light-hole excitons in these SQWs. The heavy- and light-hole exciton binding energies are found to increase owing to the image-charge effect when the well width is less than 5 nm.

• The Japan Society of Applied Physicsの論文
• 2009-09-25

著者

• Shoji Tadayoshi

  Department Of Electronics Tohoku Institute Of Technology

• Taguchi Tsunemasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Yoshida Masaaki

  Electronic Devices Company Ricoh Co. Ltd.

• Onodera Chikara

  Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan

• Shoji Tadayoshi

  Department of Electronics, Tohoku Institute of Technology, Sendai 982-8577, Japan

• Onodera Chikara

  Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School, Towada, Aomori 034-0001, Japan

• Taguchi Tsunemasa

  Department of Electrical and Electronic Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan

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