Strain Effects on Exciton Transition in CdTe Films on GaAs(100) Substrates
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概要
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We performed photoluminescence (PL) and reflectance characterization of CdTe films on GaAs substrates. Separate emission peaks for heavy- and light-hole free excitons due to induced compressive strain were observed. The strain in a CdTe film is estimated to be $\varepsilon=-5.28\times 10^{-4}$. By analyzing the PL and reflectance spectra, both heavy- and light-hole free exciton binding energies are estimated to be 9.9 meV. By analyzing the energy separation between the heavy- and light-hole free exciton reflectance dips, the magnitude of the residual compressive strain is determined to be homogeneously distributed within a CdTe film. From the CdTe film thickness dependence of heavy- and light-hole free exciton linewidths, the CdTe film quality is observed to become poor with decreasing CdTe film thickness.
- 2010-02-25
著者
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ONODERA Chikara
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Yoshida Masaaki
Department Of Applied Chemistry Faculty Of Engineering Utsunomiya University
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Masaaki Yoshida
Department of Electrical and Computer Engineering, Hachinohe National College of Technology, 16-1 Uwanotai, Tamonoki, Hachinohe, Aomori 039-1192, Japan
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Onodera Chikara
Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
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Chikara Onodera
Electronic Engineering Course, Aomori Prefectural Towada Technical Senior High School, 215-1 Shimotai Sanbongi, Towada, Aomori 034-0001, Japan
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