Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-04-30

著者

• YABUTA Hisato

  Department of Quantum Matter, ADSM, Hiroshima University

• Yoshida M

  Functional Materials Research Laboratories Nec Corporation

• ARITA Koji

  ULSI Device Development Laboratory, NEC Corporation

• YAMAMICHI Shintaro

  Functional Materials Research Laboratories, NEC Corporation

• SONE Shuji

  ULSI Device Development Laboratory, NEC Corporation

• KATO Yoshitake

  ULSI Device Development Laboratory, NEC Corporation

• AKAHANE Reiko

  Fundamental Research Laboratories, NEC Corporation

• YABUTA Hisato

  Fundamental Research Laboratories, NEC Corporation

• YAMAMICHI Shintaro

  Fundamental Research Laboratories, NEC Corporation

• YOSHIDA Masaji

  Fundamental Research Laboratories, NEC Corporation

• Yabuta Hisato

  Department Of Quantum Matter Adsm Hiroshima University

• Yoshida M

  Yoshida Semiconductor Lab. Fukuoka Jpn

• YOSHIDA Masayuki

  Kyushu Institute of Design

• Yoshida Masayoshi

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Yamamichi Shintaro

  Functional Materials Research Laboratories Nec Corporation

• Yamamichi Shintaro

  Fundamental Research Laboratories Nec Corporation

• Yoshida M

  National Institute Of Advanced Industrial And Science Technology (aist)

• Sone S

  Ulsi Device Development Laboratory Nec Corporation

• Arita K

  Waseda Univ. Tokyo Jpn

• Kato Y

  Ulsi Device Development Laboratory Nec Corporation:(present Address)advanced Process R&d And Str

• Akahane Reiko

  Fundamental Research Laboratories Nec Corporation:(present Address)functional Materials Laboratories

• Yoshida Masaji

  Fundamental Research Laboratories Nec Corporation

• Yashiro M

  Univ. Tokyo Tokyo

• Arita K

  Ulsi Device Development Laboratory Nec Corporation

• Arita Koji

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Kato Yoshitake

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Sone Shuji

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

関連論文

• Temperature- and Field-Induced First-Order Ferromagnetic Transitions in MnFe(P_Ge_x)(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Time-Dependent Leakage Current Behavior of Integrated Ba_Sr_TiO_3 Thin Film Capacitors during Stressing
• Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_Sr_TiO_3 Capacitors Integrated in a Silicon Device
• Si LSI Process Technology for Integrating Ferroelectric Capacitors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
• Spectroscopy of Hard X-Rays (2-15 keV) Generated by Focusing Femtosecond Laser on Metal Targets
• Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
• Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
• Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
• Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
• Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
• Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms
• Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
• One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
• Effect of Polishing on Time Dependence of Average Substitutional Impurity Concentration in Dissociative and Kick-Out Mechanisms
• Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon
• Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
• A Simple Method to Determine λ from Isothermal Capacitance Measurements
• Three States of Substitutional Gold in Silicon
• Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
• Quasi-CW 110kW AlGaAs Laser Diode Array Module for Inertial Fusion Energy Laser Driver : Optics and Quantum Electronics
• Design and Performance of a Diode-Pumped Nd:Silica-Phosphate Glass Zig-Zag Slab Laser Amplffier for Inertial Fusion Energy : Optics and Quantum Electronics
• Suppressing Plasma Induced Degradation of Gate Oxide Using Silicon-on-Insulator Structures
• Suppressing Plasma Induced Degradation of Gate Oxide by Using Silicon-On-Insulator Structures
• Reduction of Charge Build-up during Reactive Ion Etching by Using SOI Structures
• Conformational Characteristics of Biphenylene-Ether-Ketone
• Stress-Optical Coefficients in Polycarbonates
• Picosecond Pulsed X-Ray Diffraction from a Pulsed Laser Heated Si(111)
• Time-Resolved X-ray Shadowgraphy Experiment of Laser Ablation of Aluminum using Laser-Induced Picosecond Pulsed X-rays
• Study of Submicron SrTiO_3 Patterning
• Spall behavior of steels under hypervelocity impact
• Laser-Induced Shock Compression of Tantalum to 1.7 TPa
• Energy-Dispersive Synchrotron Radiation Topographic Observation of InAs/GaAs Lattice-Mismatched Layer
• X-ray Penetration Depth for Large Lattice-Mismatched Heteroepitaxial Layer by Dynamical Diffraction Theory using Computer Simulation
• Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
• Enhancement of Electroluminescence Intensity from Dye-Doped Poly(3-Alkylthiophene) Light Emitting Diode with Different Alkyl-Side-Chain Length
• Electroluminescent Diodes Utilizing Polysilanes
• Polarity-Dependent Multicolor Organic Electroluminescent Device
• Two-Band Electroluminescent Emission in Organic Electroluminescent Diode with Phthalocyanine Film
• In-Diffusion and Annealing of Copper in Germanium
• Numerical Solutions of Basic Equations for Kick-Out Mechanism of Diffusion
• Diffusion Mechanism of Nickel and Point Defects in Silicon
• Criterions for Basic Assumptions in Kick-Out Mechanism of Diffusion
• Pulse Response of Electroluminescence in Poly(3-alkylthiophene) Mixed with Fluorescent Dye
• Ultraviolet Electroluminescent Diode Utilizing Poly(methylphenylsilane)
• Unique Electroluminescent Characteristics of Light-Emitting Diode Utilizing Poly(3-alkylthiophene) Containing Fluorescent Dye
• Novel Characteristics of Electrolumimescent Diode with Organic Multiple-Quantum-Well Structure
• Conformational Characteristics of Poly-ether-ether-ketone and Poly-ether-nitrile
• Polarization Anisotropy of Organic Electroluminescent Diode with Periodic Multilayer Structure Utilizing 8-Hydroxyquinoline Aluminum and Aromatic Diamine
• Color-Variable Electroluminescent Diode with Single Quantum Well Structure Utilizing 8-Hydroxyquinoline Aluminum and Aromatic Diamine
• Efficient Energy Transfer in Organic Multilayer Structure Utilizing 8-Hydroxyquinoline Aluminum and Aromatic Diamine
• Unique Dynamic Characteristics of Electroluminescent Diode with Superlattice Structure Utilizing Cyclopentadiene Derivative and Aromatic Diamine
• Novel Optical and Electroluminescent Characteristics in Organic Superlattice Structure Utilizing Cyclopentadiene Derivative and Aromatic Diamine
• Contour Detection of Underground Cylindrical Cavities by Means of Acoustic Pulse Reflection Method
• Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques
• Secondary Defects of As^+ Implanted Silicon Measured by Thermal Wave Technique
• The Confirmation of the Surface Effect upon Phosphorus Diffusion into Silicon
• Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
• Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part One: Phosphorus
• Hydrolysis of Diribonucleoside Monophosphate Diesters Assisted by a Manganese(II) Complex
• Effect of Alkaline Earth Metal Ions on the Phosphodiester Hydrolysis of RNA
• Detection of Particles on Quarter μm Thick or Thinner SOI Wafers
• Detection of Particles on Quarter um Thick or Thinner SOI Wafers
• On the Distinction between the Dissociative and Kick-Out Mechanisms for Site Exchange in Silicon
• RuO_2/TiN-Based Storage Electrodes for (Ba, Sr)TiO_3 Dynamic Random Access Memory Capacitors
• Influence of Strontium Impurities on Silicon Substrates during Thermal Processing
• SrTiO_3 Thin Film Preparation by Ion Beam Sputtering and Its Dielectric Properties : Thin Films
• Photoacoustic and Photoluminescence Studies of CdS_xSe_ Doped Glasses
• Lanthanide Complexes with High Stability and Efficiency for the Hydrolysis of a Ribonucleptide Dimer
• Growth Characteristics and Electrical Properties of (100) CdTe Layers Grown on (100) GaAs by Low-Pressure Organometallic Vapor Phase Epitaxy
• Unprecedentedly Fast DNA Hydrolysis by the Synergism of the Cerium(IV)-Praseodymium(III)and the Cerium(IV)-Neodymium(III)Combinations^1
• DNA Hydrolysis by Cerium(IV) Does Not Involve either Molecular Oxygen or Hydrogen Peroxide
• Dinulear Lanthanum (III) Complex for Efficient Hydrolysis of RNA
• Thermodynamics of GaAs Growth by MOC-VPE
• Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
• Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl : Condensed Matter
• Two-Time Three-Equation Method for Analysis of Oxidation-Enhanced and -Retarded Diffusions and Growth of Oxidation Stacking Faults in Silicon
• Analysis of Oxidation Enhanced and Retarded Diffusions and Growth of Oxidation Stacking Fault in Silicon : Semiconductors and Semiconductor Devices
• Decrease in Quasi Vacancy Formation Energy in the Study of Pair Diffusion Model of Group V Impurities in Silicon
• Diffusion of Phosphorus in Silicon
• General Theory of Phosphorus and Arsenic Diffusions in Silicon
• Components of Chemical Reactions in Solids
• Chemical Potential of Impurity-Vacancy Pairs in Solids
• Effect of a Frenkel Pair Generation-Annihilation Term upon Diffusion Equations of Self-Interstitials and Vacancies
• Low Temperature Deposition of (Ba, Sr)TiO3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
• Electrical Properties of (Ba, Sr)TiO3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing

もっと見る 閉じる

スポンサーリンク