SrTiO_3 Thin Film Preparation by Ion Beam Sputtering and Its Dielectric Properties : Thin Films

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概要

• 論文の詳細を見る

• SrTiO_3 thin films have been prepared on Pd-coated sapphire substrates by ion beam sputtering of a SrTiO_3 target, and their dielectric properties have been studied. Oxygen flow introduction was necessary to obtain good insulating films. Dielectric constant ε_r values were 190 and 240 for 430℃ and 540℃ substrate temperatures, respectively. These ε_r values were not dependent on film thickness in the range from 200 nm down to 50 nm. A 53 nm-thick film indicated leakage current density of less than 10^<-8> A/cm^2 at up to 2 V, along with a 230ε_r value.

• 社団法人応用物理学会の論文
• 1991-09-30

著者

• YAMAMICHI Shintaro

  Functional Materials Research Laboratories, NEC Corporation

• YAMAMICHI Shintaro

  Fundamental Research Laboratories, NEC Corporation

• SAKUMA Toshiyuki

  Fundamental Research Laboratories, NEC Corporation

• MIYASAKA Yoichi

  Fundamental Research Laboratories, NEC Corporation

• Yamamichi Shintaro

  Functional Materials Research Laboratories Nec Corporation

• Yamamichi Shintaro

  Fundamental Research Laboratories Nec Corporation

• Tokashiki K

  Nec Corp. Kanagawa Jpn

• TAKEMURA Koichi

  Fundamental Research Laboratories, NEC Corporation

• Sakuma T

  Fundamental Research Laboratories Nec Corporation

• Sakuma Toshiyuki

  Fundamental Research Laboratories Nec Corporation

• Takemura K

  Fundamental Research Laboratories Nec Corporation

• Takemura Koichi

  Fundamental Research Laboratories Nec Corporation

• Miyasaka Y

  Fundamental Research Laboratories Nec Corporation

• Miyasaka Yoichi

  Fundamental Research Laboratories Nec Corporation

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