Ferroelectric Properties of Sol-Get Derived Pb(Zr,Ti)O_3 Thin Films
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概要
- 論文の詳細を見る
Pb(Zr,Ti)O_3 thin films of thickness ranging from 55 nm to 625 nm were synthesized on Pt/Ti/SiO_2/Si substrates using a sol-get process. The film thickness dependence of both microstructure and electrical properties was investigated. The synthesized films showed columnar structure. The diameter of each column was around 100 nm regardless of the film thickness. The 328 nm-thick film exhibited a dielectric constant (a) of 1000, remanent polarization (P_r) of 20 μC/cm_2, and coercive field (E_) of 47 kV/cm. Both ε and P_r decreased and E_c increased with decreasing film thickness. This behavior is attributed to the existence of a low-dielectric-constant interface layer. The results of leakage current measurement were in good agreement with the model of space-charge-limited current.
- 社団法人応用物理学会の論文
- 1993-09-30
著者
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SAKUMA Toshiyuki
Fundamental Research Laboratories, NEC Corporation
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MIYASAKA Yoichi
Fundamental Research Laboratories, NEC Corporation
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Ochi A
Nec Corp. Kawasaki Jpn
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Ochi Atsushi
Fundamental Res. Labs.
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Amanuma K
Silicon Systems Research Laboratories Nec Corporation
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HASE Takashi
Fundamental Research Laboratories, NEC Corporation
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MORI Toru
Fundamental Research Laboratories, NEC Corporation
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AMANUMA Kazushi
Fundamental Research Laboratories, NEC Corporation
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Sakuma T
Fundamental Research Laboratories Nec Corporation
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Sakuma Toshiyuki
Fundamental Research Laboratories Nec Corporation
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Hase T
Nec Corp. Kawasaki Jpn
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Hase Takashi
Fundamental Research Laboratories Nec Corporation
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Mori Toru
Fundamental Research Laboratories Nec Corporation
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Miyasaka Y
Fundamental Research Laboratories Nec Corporation
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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