Ferroelectric Pb(Zr, Ti)O_3 Thin Films Prepared by Metal Target Sputtering : T: Thin Film
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-11-30
著者
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MIYASAKA Yoichi
Fundamental Research Laboratories, NEC Corporation
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MATSUBARA Shogo
Fundamental Res. Labs. and VLSI Development Div., NEC Corporation
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Shohata Nobuaki
Fundamental Research Laboratories Nec Corporation
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Shohata Nobuaki
Fundamental Res. Labs. And Vlsi Development Div. Nec Corporation
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CROTEAU Andre
Fundamental Research Laboratories, NEC Corporation
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Matsubara Shogo
Fundamental Res. Labs. And Vlsi Development Div. Nec Corporation
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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Croteau Andre
Fundamental Research Laboratories Nec Corporation
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- Ferroelectric Pb(Zr, Ti)O_3 Thin Films Prepared by Metal Target Sputtering : T: Thin Film
- Fatigue Characteristics of Sol-Gel Derived Pb(Zr, Ti)O_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Ferroelectric Properties of Sol-Get Derived Pb(Zr,Ti)O_3 Thin Films
- Reactive Coevaporation Synthesis and Characterization of SrTiO_3 Thin Films : Thin Films
- Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature
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