Imprint Characteristics of SrBi2Ta2O9 Thin Films with Modified Sr Composition
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概要
- 論文の詳細を見る
Imprint characteristics of SrBi2Ta2O9 (SBT) thin films with modified Sr composition were investigated under elevated temperatures. A significant shift in readout charge was observed after applying unipolar pulses (dynamic imprint test) at above 100°C, while only a small shift was detected even when the capacitors were held at 150°C for up to 104 s without any electrical signals (static imprint test). The charge shift was due to the internal voltage formed by applying the unipolar pulses. Its increase, that is, degradation of dynamic imprint endurance with increasing temperature is attributed to both an increase of the internal voltage and a decrease of the coercive voltage (Vc). There was no significant difference in the internal voltage between Sr deficient and Sr non-deficient SBT. SBT with a Sr deficient composition had a relatively high dynamic imprint endurance compared to the Sr non-deficient films because of higher remanent polarization and larger Vc.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-09-30
著者
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Takemura Koichi
Fundamental Research Laboratories Nec Corporation
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Hase Takashi
Fundamental Research Laboratories Nec Corporation
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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NOGUCHI Takehiro
Fundamental Research Laboratories, NEC Corporation
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Hase Takashi
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216-8555, Japan
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Miyasaka Yoichi
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216-8555, Japan
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Noguchi Takehiro
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216-8555, Japan
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