Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature
スポンサーリンク
概要
- 論文の詳細を見る
Ferroelectric properties, crystal structure and microstructures were examined for various Sr/Bi/Ta atomic ratio strontium bismuth tantalate (SBT) films prepared by metalorganic decomposition at 700 and 800℃. The 20% Sr-deficient and 10% Bi-excess (0.8/2.2/2) composition showed maximum remanent polarization (P_r) values for both 700 and 800℃ crystallization temperatures. From TEM analysis, the P_r dependence on composition variation around the stoichiometric 1/2/2 composition was related to grain size and volume of voids. The effect of postannealing after Pt top electrode fabrication was also studied. On the films prepared at 800℃, postannealing markedly reduced the capacitor shorting rate. This was attributed to recrystallization of the Pt top layer, based on SEM analysis of the Pt layer and the Pt/SBT interface.
- 社団法人応用物理学会の論文
- 1996-09-30
著者
-
Hase Takashi
Fundamental Research Laboratories Nec Corporation
-
Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
-
NOGUCHI Takehiro
Fundamental Research Laboratories, NEC Corporation
関連論文
- Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Study of Submicron SrTiO_3 Patterning
- Effect of Reducing Process Temperature for Preparing SrBi_2Ta_20_9 in a Metal/Ferroelectric/ Semiconductor Structure
- Preparation of Pb(Zr, Ti)O_3 Thin Films by Multitarget Sputtering ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation of Pb(Zr,Ti)O_3 Thin Films by Multi-Target Sputtering
- Pb(Zr, Ti)O_3 Thin-Film Preparation by Multitarget Magnetron Sputtering
- RuO_2/TiN-Based Storage Electrodes for (Ba, Sr)TiO_3 Dynamic Random Access Memory Capacitors
- SrTiO_3 Thin Film Preparation by Ion Beam Sputtering and Its Dielectric Properties : Thin Films
- ZnO/SiO_2/Si Diaphragm Bulk Acoustic Wave Composite Resonators : Ultrasonic Transduction
- Single 1.5V Operation Power Amplifier MMIC with SrTiO_3 Capacitors for 2.4GHz Wireless Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- SrTiO_3 Capacitor with Relative Dielectric Constant of 200 on GaAs Substrate at Microwave Frequency
- Ferroelectric Pb(Zr, Ti)O_3 Thin Films Prepared by Metal Target Sputtering : T: Thin Film
- Fatigue Characteristics of Sol-Gel Derived Pb(Zr, Ti)O_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Ferroelectric Properties of Sol-Get Derived Pb(Zr,Ti)O_3 Thin Films
- Reactive Coevaporation Synthesis and Characterization of SrTiO_3 Thin Films : Thin Films
- Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature
- High Dielectric Constant (Ba, Sr)TiO_3 Thin Films for ULSI DRAM Application
- Imprint Characteristics of SrBi2Ta2O9 Thin Films with Modified Sr Composition