RuO_2/TiN-Based Storage Electrodes for (Ba, Sr)TiO_3 Dynamic Random Access Memory Capacitors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-09-30
著者
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YAMAMICHI Shintaro
ULSI Device Development Laboratories, NEC Corporation
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LESAICHERRE Pierre-Yves
ULSI Device Development Laboratories, NEC Corporation
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Yamamichi Shintaro
Functional Materials Research Laboratories Nec Corporation
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Yamamichi Shintaro
Ulsi Device Development Laboratories Nec Corporation
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Lesaicherre Pierre-yves
Ulsi Device Development Laboratories Nec Corporation
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Ono Haruhiko
Ulsi Device Development Laboratories Nec Corporation
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Tokashiki K
Nec Corp. Kanagawa Jpn
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Tokashiki Ken
Ulsi Device Development Laboratories Nec Corporation
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Yoshida Masaji
Fundamental Research Laboratories Nec Corporation
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TAKEMURA Koichi
Fundamental Research Laboratories, NEC Corporation
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Takemura Koichi
Fundamental Research Laboratories Nec Corporation
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Miyamoto Hidenobu
Ulsi Device Development Laboratories Nec Corporation
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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