Gate Electrode Etching Using a Transformer Coupled Plasma

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概要

• 論文の詳細を見る

• Gate electrode etching using a transformer coupled plasma (TCP) was studied for future device fabrication. The influence of chamber hardware configuration on plasma characteristics and etching performance has been studied for polysilicon and polycide etching. It has been found that etching and plasma uniformities greatly depend upon dielectric plate shape and position of the inductive coil on the dielectric plate, and that distance between the inductive coil and the dielectric plate has a big impact on the etching performance. This impact on the etching perfor-mance is caused by changing the capacitively coupled component in the inductively coupled plasma.

• 社団法人応用物理学会の論文
• 1995-04-30

著者

• Ikawa Eiji

  Ulsi Device Development Laboratories Nec Corporation

• Miyamoto Hidenobu

  Ulsi Device Development Laboratories Nec Corporation

• Murao Yukinobu

  Ulsi Device Development Laboratories Nec Corporation

• Yoshida Kazuyoshi

  ULSI Device Development Laboratories, NEC Corporation

• Yoshida Kazuyoshi

  Ulsi Device Development Laboratories Nec Corporation

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• Gate Electrode Etching Using a Transformer Coupled Plasma

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