Oxide Etching Using Surface Wave Coupled Plasma

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概要

• 論文の詳細を見る

• Oxide etching was evaluated using a new high-density plasma, which was based on surface wave coupled plasma(SWP). This plasma applicator can uniformly generate microwave plasma over a large area, and it can be formed without quartz tubes or plates. The plasma characteristics of SWP were investigated at the low-pressure region. At the First stage, oxide etching characteristics were evaluated. The SWP oxide etcher had a high etching rate and achieved quarter-micron window etching of vertical profile.

• 社団法人応用物理学会の論文
• 1994-12-30

著者

• Akimoto Takeshi

  Ulsi Device Development Laboratories Nec Corporation

• Ikawa Eiji

  Ulsi Device Development Laboratories Nec Corporation

• SANGO Toshiaki

  ULSI Manufacturing Engineering Division, NEC Corporation

• KOMACHI Kyouichi

  Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.,

• KATAYAMA Katuo

  Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.,

• EBATA Tosiki

  Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.,

• Ebata T

  Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.

• Sango Toshiaki

  Ulsi Manufacturing Engineering Division Nec Corporation

• Katayama Katuo

  Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.

• Komachi Kyouichi

  Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.

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