A 0.18-μm CMOS Hot-Standby PLL Using a Noise-Immune Adaptive-Gain VCO (Special Issue on Low-Power and High-Speed LSI Technologies)
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概要
- 論文の詳細を見る
Phase-Locked Loop (PLL) designers have two major problems with regard to the production of practical, portable multimedia communication systems. The first is the difficulty of achieving both fast lock time and low jitter operation simultaneously. This can be particularly difficult because the increase in loop stability needed to reduce jitter increases the lock time. The second is the problem caused by circuits operating at low voltage supplies. Low voltage supplies adversely effect the performance of phase-frequency detectors and charge pump circuits, and they can decrease the noise immunity of oscillators. We have developed a hot-standby architecture, which can achieve both fast lock time and low jitter operation simultaneously, and low-voltage circuit techniques, such as a noise-immune adaptive-gain voltage-controlled oscillator, for a fabricated PLL. This PLL is fully integrated onto a 480-μm×450-μm die area with 0.18-μm CMOS technology. It can operate from 0.5 V to 1.2 V, and with a lock range from 40 MHz to 170 MHz at 0.5 V. The jitter is less than 200 ps and the lock time is less than 500 ns.
- 社団法人電子情報通信学会の論文
- 1997-12-25
著者
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Tamura Takao
Ulsi Device Development Laboratories Nec Corp.
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Tamura T
Ulsi Device Development Research Laboratories Nec Corporation
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Yamashina Masakazu
The Authors Are With Silicon Systems Research Laboratories Nec Corporation
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Yamashina Masakazu
Microelectronics Res. Labs. Nec Corporation
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Yamashina Masakazu
Silicon-systems Research Laboratories Nec Corporation
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Mizuno Masayuki
The Authors Are With Silicon Systems Research Laboratories Nec Corporation
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Mizuno Masayuki
Silicon-systems Research Laboratories Nec Corporation
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Mizuno M
Nec Corp. Sagamihara‐shi Jpn
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FURUTA Koichiro
The authors are with Silicon Systems Research Laboratories, NEC Corporation
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FURUTA Koichiro
Silicon Systems Research Laboratories, NEC Corporation
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ANDOH Takeshi
ULSI Device Development Research Laboratories, NEC Corporation
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TANABE Akira
Silicon Systems Research Laboratories, NEC Corporation
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MIYAMOTO Hidenobu
ULSI Device Development Research Laboratories, NEC Corporation
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FURUKAWA Akio
Silicon Systems Research Laboratories, NEC Corporation
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Andoh Takeshi
Ulsi Device Development Research Laboratories Nec Corporation
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Furuta K
The Authors Are With Silicon Systems Research Laboratories Nec Corporation
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Furukawa A
Networking Res. Labs. Nec Corporation
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Miyamoto Hidenobu
Ulsi Device Development Laboratories Nec Corporation
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Miyamoto Hidenobu
Ulsi Device Development Research Laboratories Nec Corporation
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Tanabe Akira
Silicon Systems Research Laboratories Nec Corporation
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Furukawa Akio
Silicon Systems Research Laboratories Nec Corporation
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