Coulomb Interaction Effect in Cell Projection Lithography

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-12-30

著者

• Tamura Takao

  Ulsi Device Development Laboratories Nec Corp.

• Nomura E

  Nec Corp. Ibaraki Jpn

• Nomura Eiichi

  Fundamental Research Laboratories Nec Corporation

• Nomura Eiichi

  Fundamental Research Labs Nec Corporation

• YAMASHITA Hiroshi

  ULSI Device Development Labs, NEC Corporation

• NOZUE Hiroshi

  ULSI Device Development Laboratories, NEC Corporation

• Nozue H

  Leepl Corp. Kanagawa Jpn

• Yamashita H

  Teikyo Univ. Tokyo Jpn

• Yamashita Hiroshi

  Ulsi Device Development Division Nec Corporation

• Nozue Hiroshi

  ULSI Device Development Laboratories, NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan

関連論文

• Proximity Effect Correction by Pattern Modified Stencil Mask in Large-Field Projection Electron-Beam Lithography
• Recent Progress in Electron-Beam Cell Projection Techology
• Nanometer-Scale Patterning of Polystyrene Resists in Low-Voltage Electron Beam Lithography
• Calixarene Electron Beam Resist for Nano-Lithography
• Resolution-Limit Study of Chain-Structure Negative Resist by Electron Beam Lithography
• Fluorine Gas Field Ion Source : Beam Induced Physics and Chemistry
• Coulomb Interaction Effect in Cell Projection Lithography
• Contrast Evaluation of the SCALPEL GHOST in 100 kV Electron Projection Lithography
• Sub-10-nm Electron Beam Lithography Using a Poly(α-methylstyrene) Resist with a Molecular Weight of 650
• Hydrogen Content in a-SiC:H Films Prepared by Plasma Decomposition of Silane and Methane or Ethylene
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• Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma CVD
• Characterization of Stable Fluorine-Doped Silicon Oxide Film Prepared by Biased Helicon Plasma Chemical Vapor Deposition
• 0.15 μm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication
• Resist Heating in Cell Projection Electron Beam Direct Writing
• Improved Proximity Effect Correction Technique Suitable for Cell Projection Electron Beam Direct Writing System
• Electrical Equivalent Circuit of Loaded Thick Langevin Flexural Transducer
• Derivation of a Force Factor Equation for a Langevin-Type Flexural Mode Transducer
• Prebreakdown Density Change Streamer in Liquid Nitrogen
• 0.15 µm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication

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