Improved Proximity Effect Correction Technique Suitable for Cell Projection Electron Beam Direct Writing System

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概要

• 論文の詳細を見る

• Electron beam (EB) direct writing is expected to play an important role in the field of lithography for manufacturing future advanced ULSIs. Cell projection techniques are of particular interest, which may make the EB direct writing system practical for use in ULSI memories with many repeated patterns. However, the proximity effect of such systems disturbs the formation of fine 0.2 μm level patterns throughout the patterning area. Inorder to solve this problem, we have developed an improved proximity effect correction technique suitable for use in a cell projection EB direct writing system. This technique makes use of smaller cell projection shot (CPS) size in the edge region than in the center region in the EB direct writing area with dose compensation between CPSs, based on the self-consistent method. Utilizing this technique, we can obtain fine 0.2 μm patterns with 0.02 μm critical dimension (CD) control patterns, which are required to manufacture 1Gbit dynamic random access memories(DRAMS).

• 社団法人応用物理学会の論文
• 1994-12-30

著者

• Tamura Takao

  Ulsi Device Development Laboratories Nec Corp.

• NAKAJIMA Ken

  ULSI Device Development Labs, NEC Corporation

• NOZUE Hiroshi

  ULSI Device Development Laboratories, NEC Corporation

• Nozue H

  Leepl Corp. Kanagawa Jpn

• Nozue Hiroshi

  ULSI Device Development Laboratories, NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan

関連論文

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• 0.15μm CMOS Devices with Reduced Junction Capacitance
• 0.25 μm Electron Beam Direct Writing Techniques for 256 Mbit Dynamic Random Access Memory Fabrication
• 0.15 μm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication
• Resist Heating in Cell Projection Electron Beam Direct Writing
• Improved Proximity Effect Correction Technique Suitable for Cell Projection Electron Beam Direct Writing System
• Improved Registration Accuracy in E-Beam Direct Writing Lithography
• Electrical Equivalent Circuit of Loaded Thick Langevin Flexural Transducer
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• 0.15 µm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication

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