Device-Deviation Tolerant Elastic-Vt CMOS Circuits with Fine-Grain Power Control Capability(Special Issue on Novel VLSI Processor Architectures)
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概要
- 論文の詳細を見る
An elastic-Vt CMOS circuit is proposed which facilitates both high speed and low power consumption at low supply voltages.This circuit permits fine-grain power control on each multiple circuit block composing a chip, and it is not sensitive to design factors as device-parameter deviations or operating -environment variations.It also does not require any such additional fabrication technology as triple-well structure or multi-threshold voltage.The effectiveness of the circuit's design was confirmed in applying it to specially fabricated 16-bit adders and 4-kb SRAMs based on 1.5-V, 0.35-μm CMOS technology.
- 社団法人電子情報通信学会の論文
- 1998-09-25
著者
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Yamashina Masakazu
The Authors Are With Silicon Systems Research Laboratories Nec Corporation
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Yamashina Masakazu
Microelectronics Res. Labs. Nec Corporation
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Mizuno Masayuki
The Authors Are With Silicon Systems Research Laboratories Nec Corporation
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Mizuno M
Nec Corp. Sagamihara‐shi Jpn
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ABIKO Hitoshi
The authors are with ULSI Device Development Research Laboratories, NEC Corpration
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FURUTA Koichiro
The authors are with Silicon Systems Research Laboratories, NEC Corporation
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SAKAI Isami
The authors are with ULSI Device Development Research Laboratories, NEC Corpration
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Furuta K
The Authors Are With Silicon Systems Research Laboratories Nec Corporation
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Sakai Isami
The Authors Are With Ulsi Device Development Research Laboratories Nec Corpration
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Abiko Hitoshi
The Authors Are With Ulsi Device Development Research Laboratories Nec Corpration
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