Thermodynamics of GaAs Growth by MOC-VPE
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-09-20
著者
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YOSHIDA Masaji
Fundamental Research Laboratories, NEC Corporation
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Yoshida Masaji
Fundamental Research Laboratories Nec Corporation
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Watanabe Hisatsune
Fundamental Research Laboratories
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Watanabe Hisatsune
Fundamental Research Laboratories Nec Corporation
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- Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
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- Thermodynamics of GaAs Growth by MOC-VPE
- Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl : Condensed Matter
- Low Temperature Deposition of (Ba, Sr)TiO3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Electrical Properties of (Ba, Sr)TiO3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing