Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• YABUTA Hisato

  Department of Quantum Matter, ADSM, Hiroshima University

• Yoshida M

  Functional Materials Research Laboratories Nec Corporation

• ARITA Koji

  ULSI Device Development Laboratory, NEC Corporation

• YAMAMICHI Shintaro

  Functional Materials Research Laboratories, NEC Corporation

• SONE Shuji

  ULSI Device Development Laboratory, NEC Corporation

• KATO Yoshitake

  ULSI Device Development Laboratory, NEC Corporation

• AKAHANE Reiko

  Fundamental Research Laboratories, NEC Corporation

• YABUTA Hisato

  Fundamental Research Laboratories, NEC Corporation

• YAMAMICHI Shintaro

  Fundamental Research Laboratories, NEC Corporation

• YOSHIDA Masaji

  Fundamental Research Laboratories, NEC Corporation

• Yabuta Hisato

  Department Of Quantum Matter Adsm Hiroshima University

• Yoshida M

  Yoshida Semiconductor Lab. Fukuoka Jpn

• YOSHIDA Masayuki

  Kyushu Institute of Design

• Yoshida Masayoshi

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Yamamichi Shintaro

  Functional Materials Research Laboratories Nec Corporation

• Yamamichi Shintaro

  Fundamental Research Laboratories Nec Corporation

• Yoshida M

  National Institute Of Advanced Industrial And Science Technology (aist)

• Sone S

  Ulsi Device Development Laboratory Nec Corporation

• Arita K

  Waseda Univ. Tokyo Jpn

• Kato Y

  Ulsi Device Development Laboratory Nec Corporation:(present Address)advanced Process R&d And Str

• Akahane Reiko

  Fundamental Research Laboratories Nec Corporation:(present Address)functional Materials Laboratories

• Yoshida Masaji

  Fundamental Research Laboratories Nec Corporation

• Yashiro M

  Univ. Tokyo Tokyo

• Arita K

  Ulsi Device Development Laboratory Nec Corporation

• Arita Koji

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Kato Yoshitake

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Sone Shuji

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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