Decrease in Quasi Vacancy Formation Energy in the Study of Pair Diffusion Model of Group V Impurities in Silicon
スポンサーリンク
概要
- 論文の詳細を見る
When the impurity concentration is high, every vacancy is under the influence of impurity atoms and the vacancy formation energy appears to decrease due to the interaction between a vacancy and two impurity atoms. Since the vacancy formation energy is defined under the condition of no influence of impurity, the decrease is called a decrease in quasi vacancy formation energy, showing that a vacancy is under the influence of impurity atoms.
- 社団法人応用物理学会の論文
- 1993-12-15
著者
関連論文
- Spectroscopy of Hard X-Rays (2-15 keV) Generated by Focusing Femtosecond Laser on Metal Targets
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
- One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
- Effect of Polishing on Time Dependence of Average Substitutional Impurity Concentration in Dissociative and Kick-Out Mechanisms
- Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon
- Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
- A Simple Method to Determine λ from Isothermal Capacitance Measurements
- Three States of Substitutional Gold in Silicon
- Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
- Picosecond Pulsed X-Ray Diffraction from a Pulsed Laser Heated Si(111)
- Time-Resolved X-ray Shadowgraphy Experiment of Laser Ablation of Aluminum using Laser-Induced Picosecond Pulsed X-rays
- Spall behavior of steels under hypervelocity impact
- Laser-Induced Shock Compression of Tantalum to 1.7 TPa
- Energy-Dispersive Synchrotron Radiation Topographic Observation of InAs/GaAs Lattice-Mismatched Layer
- X-ray Penetration Depth for Large Lattice-Mismatched Heteroepitaxial Layer by Dynamical Diffraction Theory using Computer Simulation
- Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
- Enhancement of Electroluminescence Intensity from Dye-Doped Poly(3-Alkylthiophene) Light Emitting Diode with Different Alkyl-Side-Chain Length
- Electroluminescent Diodes Utilizing Polysilanes
- In-Diffusion and Annealing of Copper in Germanium
- Numerical Solutions of Basic Equations for Kick-Out Mechanism of Diffusion
- Diffusion Mechanism of Nickel and Point Defects in Silicon
- Criterions for Basic Assumptions in Kick-Out Mechanism of Diffusion
- The Confirmation of the Surface Effect upon Phosphorus Diffusion into Silicon
- Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
- Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part One: Phosphorus
- Hydrolysis of Diribonucleoside Monophosphate Diesters Assisted by a Manganese(II) Complex
- Effect of Alkaline Earth Metal Ions on the Phosphodiester Hydrolysis of RNA
- On the Distinction between the Dissociative and Kick-Out Mechanisms for Site Exchange in Silicon
- Unprecedentedly Fast DNA Hydrolysis by the Synergism of the Cerium(IV)-Praseodymium(III)and the Cerium(IV)-Neodymium(III)Combinations^1
- Dinulear Lanthanum (III) Complex for Efficient Hydrolysis of RNA
- Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
- Two-Time Three-Equation Method for Analysis of Oxidation-Enhanced and -Retarded Diffusions and Growth of Oxidation Stacking Faults in Silicon
- Analysis of Oxidation Enhanced and Retarded Diffusions and Growth of Oxidation Stacking Fault in Silicon : Semiconductors and Semiconductor Devices
- Decrease in Quasi Vacancy Formation Energy in the Study of Pair Diffusion Model of Group V Impurities in Silicon
- Diffusion of Phosphorus in Silicon
- General Theory of Phosphorus and Arsenic Diffusions in Silicon
- Components of Chemical Reactions in Solids
- Chemical Potential of Impurity-Vacancy Pairs in Solids
- Effect of a Frenkel Pair Generation-Annihilation Term upon Diffusion Equations of Self-Interstitials and Vacancies