ARITA Koji | ULSI Device Development Laboratory, NEC Corporation
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概要
関連著者
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ARITA Koji
ULSI Device Development Laboratory, NEC Corporation
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Arita K
Ulsi Device Development Laboratory Nec Corporation
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Shimada Y
Tokyo Inst. Technol. Yokohama Jpn
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OTSUKI Tatsuo
Electronics Research Laboratory, Matsushita Electronics Corporation
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Otsuki T
Panasonic Technol. Inc. Co Usa
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Azuma M
Electronics Research Laboratory Matsushita Electronics Corporation
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Matsuda Akihiro
Electronics Research Laboratory Matsushita Electronics Corporation
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嶋田 豊
富山医科薬科大学医学部和漢診療学
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Otsuki Tatsuo
Electronics Research Laboratory Matsushita Electronics Corporation
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Asari Koji
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Inoue Atsuo
Electronics Research Laboratory Matsushita Electronics Corporation
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FUJII Eiji
Industrial Technology Center of Okayama Prefecture
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Inoue A
Mitsubishi Electric Corp. Itami‐shi Jpn
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Shimada Yuji
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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SHIMADA Yasuhiro
Electronics Research Laboratory, Matsushita Electronics Corporation
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NASU Toru
Electronics Research Laboratory, Matsushita Electronics Corporation
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MATSUDA Akihiro
Electronics Research Laboratory, Matsushita Electronics Corporation
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ARITA Koji
Electronics Research Laboratory, Matsushita Electronics Corporation
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FUJII Eiji
Electronics Research Laboratory, Matsushita Electronics Corporation
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UEMOTO Yasuhiro
Electronics Research Laboratory, Matsushita Electronics Corporation
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SONE Shuji
ULSI Device Development Laboratory, NEC Corporation
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KATO Yoshitake
ULSI Device Development Laboratory, NEC Corporation
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Nasu Toru
Electronics Research Laboratory Matsushita Electronics Corporation
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Uemoto Y
Electronics Research Laboratory Matsushita Electronics Corporation
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ASARI Koji
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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Yamamichi Shintaro
Fundamental Research Laboratories Nec Corporation
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Shimada Yasuhiro
Electronics Research Laboratory Matsushita Electronice Corporation
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Inoue A
Microwave Device Development Department Mitsubishi Electric Corporation
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Fujii Eiji
First Department Of Oral And Maxillofacial Surgery Faculty Of Dentistry Tokyo Medical And Dental Uni
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Fujii Eiji
Research Laboratories Ii Tamanoi Vinegar Co. Ltd.
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Arita Koji
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Kato Yoshitake
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Sone Shuji
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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YABUTA Hisato
Department of Quantum Matter, ADSM, Hiroshima University
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NAGANO Yoshihisa
Electronics Research Laboratory, Matsushita Electronics Corporation
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Yoshida M
Functional Materials Research Laboratories Nec Corporation
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YAMAMICHI Shintaro
Functional Materials Research Laboratories, NEC Corporation
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YABUTA Hisato
Fundamental Research Laboratories, NEC Corporation
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Yabuta Hisato
Department Of Quantum Matter Adsm Hiroshima University
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Yoshida M
Yoshida Semiconductor Lab. Fukuoka Jpn
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YOSHIDA Masayuki
Kyushu Institute of Design
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Uemoto Yasuhiro
Electronics Research Laboratory Matsushita Electronics Corporation
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Nagano Yoshihisa
Electronics Research Laboratory Matsushita Electronics Corporation
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Yoshida Masayoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Yamamichi Shintaro
Functional Materials Research Laboratories Nec Corporation
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Yoshida M
National Institute Of Advanced Industrial And Science Technology (aist)
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Sone S
Ulsi Device Development Laboratory Nec Corporation
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Arita K
Waseda Univ. Tokyo Jpn
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Kato Y
Ulsi Device Development Laboratory Nec Corporation:(present Address)advanced Process R&d And Str
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Akahane Reiko
Fundamental Research Laboratories Nec Corporation:(present Address)functional Materials Laboratories
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Yoshida Masaji
Fundamental Research Laboratories Nec Corporation
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Yashiro M
Univ. Tokyo Tokyo
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Hayashi S
Matsushita Electronics Corp. Kyoto Jpn
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AZUMA Masamichi
Electronics Research Laboratory, Matsushita Electronics Corporation
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AKAHANE Reiko
Fundamental Research Laboratories, NEC Corporation
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YAMAMICHI Shintaro
Fundamental Research Laboratories, NEC Corporation
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YOSHIDA Masaji
Fundamental Research Laboratories, NEC Corporation
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Azuma Masamichi
Electronics Research Laboratory Matsushita Electronics Corporation
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Hayashi Shose
Electronics Research Laboratory Matsushita Electronics Corporation
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Hayashi S
Tokyo Univ. Mercantile Marine Tokyo Jpn
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Azuma Mitsuhiro
Fujitsu Laboratories Limited
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Azuma Mitsuhiro
Electronics Research Laboratory Matsushita Electronics Corporation
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本田 雄士
日本電気(株)システムデバイス研究所
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本田 雄士
Nec基礎研究所
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Mcmillan Larry
Symetrix Corporation
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Matsuki T
Ulsi Device Development Laboratory Nec Corporation
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UMEMOTO Yasuhiro
Electronics Research Laboratory, Matsushita Electronics Corporation
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OISHI Yoshiro
Electronics Research Laboratory, Matsushita Electronics Corporation
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HAYASHI Shin-ichiro
Electronics Research Laboratory, Matsushita Electronics Corporation
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SUZUOKA Nobuyuki
Microcomputer Division, Matsushita Electronics Corporation
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Hayashi Shinichiro
Electronics Research Laboratory, Matsushita Electronics Corporation
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Katsu Shin-ichi
Electronics Research Laboratory, Matsushita Electronics Corporation
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Kano Gota
Electronics Research Laboratory, Matsushita Electronics Corporation
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Araujo Carlos
Microelectronics Research Laboratory, University of Colorado
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IIZUKA Toshihiro
ULSI Device Development Laboratory, NEC Corporation
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YAMAMOTO Ichiro
ULSI Device Development Laboratory, NEC Corporation
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YAMAGUCHI Hiromu
ULSI Device Development Laboratory, NEC Corporation
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MATSUKI Takeo
ULSI Device Development Laboratory, NEC Corporation
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YABUTA Hisato
Functional Materials Research Laboratories, NEC Corporation
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MIYASAKA Yoichi
Functional Materials Research Laboratories, NEC Corporation
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Kano G
Electronics Research Laboratory Matsushita Electronics Corporation
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Kano Gota
Electronics Research Laboratory Matsushita Electronics Corporation
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Araujo Carlos
Microelectronics Research Laboratory University Of Colorado
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Katsu Shin-ichi
Electronics Research Laboratory Matsushita Electronics Corporation
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HIRANO Hiroshige
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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HONDA Toshiyuki
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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SUMI Tatsumi
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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TAKEO Masato
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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MORIWAKI Nobuyuki
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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NAKANE George
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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NAKAKUMA Tetsuji
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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CHAYA Shigeo
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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MUKUNOKI Toshio
The author is with Corporate Semiconductor Development Division, Matsushita Electric Industrial CO.,
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JUDAI Yuji
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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AZUMA Masamichi
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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SHIMADA Yasuhiro
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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OTSUKI Tatsuo
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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SUMI Tadashi
the System LSI Laboratory, Mitsubishi Electric Corporation
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Oishi Yoshiro
Electronics Research Laboratory Matsushita Electronics Corporation
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Suzuoka Nobuyuki
Microcomputer Division Matsushita Electronics Corporation
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Hayashi Shinichiro
Electronics Research Laboratory Matsushita Electronics Corporation
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Honda T
System Devices Research Laboratories Nec Corporation
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Judai Yuji
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Sumi T
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Takeo Masato
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Chaya Shigeo
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Nakane George
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Honda T
Fukuoka Univ. Fukuoka Jpn
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Yamaguchi H
Ntt Basic Research Laboratories
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Mukunoki Toshio
The Author Is With Corporate Semiconductor Development Division Matsushita Electric Industrial Co. L
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Matsuki Takeo
Ulsi Device Development Laboratory Nec Corporation
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Azuma Masamichi
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Judai Yuji
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Iizuka Toshihiro
Ulsi Device Development Laboratory Nec Corporation
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Hirano Hiroshige
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Nakakuma Tetsuji
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Moriwaki Nobuyuki
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Yamamoto Ichiro
Ulsi Device Development Laboratories Nec Corporation
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Yamamoto Ichiro
Ulsi Device Development Laboratory Nec Corporation
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YAMAGUCHI Hiromu
ULSI Device Development Laboratories, NEC Corporation
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Yabuta Hisato
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan
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Yamamichi Shintaro
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan
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Iizuka Toshihiro
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Akahane Reiko
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan
著作論文
- Time-Dependent Leakage Current Behavior of Integrated Ba_Sr_TiO_3 Thin Film Capacitors during Stressing
- Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_Sr_TiO_3 Capacitors Integrated in a Silicon Device
- Si LSI Process Technology for Integrating Ferroelectric Capacitors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Electrical Properties of (Ba, Sr)TiO3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing