Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
スポンサーリンク
概要
- 論文の詳細を見る
Ferroelectric non-volatile memory (FeRAM) has been inspiring interests since bismuth layer perovskite material family was found to provide "Fatigue Free" endurance, superior retention and imprint characteristics.In this paper, we will provide new circuits technology for FeRAM developed to implement high speed operation, low voltage operation and low power consumption.Performance of LSI embedded with FeRAM for contactless IC card is also provided to demonstrate the feasibility of the circuit technology.
- 社団法人電子情報通信学会の論文
- 1998-04-25
著者
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本田 雄士
日本電気(株)システムデバイス研究所
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本田 雄士
Nec基礎研究所
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Shimada Y
Tokyo Inst. Technol. Yokohama Jpn
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Shimada Yuji
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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OTSUKI Tatsuo
Electronics Research Laboratory, Matsushita Electronics Corporation
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ARITA Koji
ULSI Device Development Laboratory, NEC Corporation
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Otsuki T
Panasonic Technol. Inc. Co Usa
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Azuma M
Electronics Research Laboratory Matsushita Electronics Corporation
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Matsuda Akihiro
Electronics Research Laboratory Matsushita Electronics Corporation
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ASARI Koji
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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HIRANO Hiroshige
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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HONDA Toshiyuki
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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SUMI Tatsumi
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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TAKEO Masato
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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MORIWAKI Nobuyuki
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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NAKANE George
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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NAKAKUMA Tetsuji
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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CHAYA Shigeo
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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MUKUNOKI Toshio
The author is with Corporate Semiconductor Development Division, Matsushita Electric Industrial CO.,
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JUDAI Yuji
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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AZUMA Masamichi
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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SHIMADA Yasuhiro
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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OTSUKI Tatsuo
The authors are with Electronics Research Laboratory, Matsushita Electronics Corporation
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SUMI Tadashi
the System LSI Laboratory, Mitsubishi Electric Corporation
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嶋田 豊
富山医科薬科大学医学部和漢診療学
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Otsuki Tatsuo
Electronics Research Laboratory Matsushita Electronics Corporation
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Honda T
System Devices Research Laboratories Nec Corporation
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Asari Koji
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Judai Yuji
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Sumi T
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Takeo Masato
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Chaya Shigeo
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Nakane George
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Honda T
Fukuoka Univ. Fukuoka Jpn
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Mukunoki Toshio
The Author Is With Corporate Semiconductor Development Division Matsushita Electric Industrial Co. L
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Arita K
Ulsi Device Development Laboratory Nec Corporation
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Azuma Masamichi
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Judai Yuji
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Hirano Hiroshige
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Nakakuma Tetsuji
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Moriwaki Nobuyuki
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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