Ferroelectric Nonvolatile Memory Technology and Its Applications
スポンサーリンク
概要
- 論文の詳細を見る
Nonvolatile memory utilizing ferroelectric material is expected to be the ultimate memory due to its theoretical low power operation and fast access. We integrated a ferroelectric thin film using a standard complementary metal-oxide-semiconductor (CMOS) process and evaluated its basic characteristics and reliability including endurance and imprint effect. The film was prepared using a spin-on sol-gel method. A ferroelectric thin film formed using liquid source misted chemical deposition (LSMCD) was found to have almost the same characteristics as those of the film formed by the sol-gel method. No effects of the ferroelectric process on the CMOS transistors were observed. Design of ferroelectric memory cells and applications of the ferroelectric nonvolatile memory have been reviewed.
- 1996-02-28
著者
-
Inoue Atsuo
Electronics Research Laboratory Matsushita Electronics Corporation
-
ARITA Koji
Electronics Research Laboratory, Matsushita Electronics Corporation
-
HAYASHI Shin-ichiro
Electronics Research Laboratory, Matsushita Electronics Corporation
-
Nasu Toru
Electronics Research Laboratory Matsushita Electronics Corporation
-
Azuma Masamichi
Electronics Research Laboratory Matsushita Electronics Corporation
-
Matsuda Akihiro
Electronics Research Laboratory Matsushita Electronics Corporation
-
JUDAI Yuji
Kyoto Research Laboratory, Matsushita Electronics Corporation
-
ITO Toyoji
Kyoto Research Laboratory, Matsushita Electronics Corporation
-
TAKEO Masato
Kyoto Research Laboratory, Matsushita Electronics Corporation
-
FUJI Eiji
Electronics Research Laboratory, Matsushita Electronics Corporation
-
Uemoto Yasuhiro
Electronics Research Laboratory Matsushita Electronics Corporation
-
Otsuki Tatsuo
Electronics Research Laboratory Matsushita Electronics Corporation
-
Nagano Yoshihisa
Electronics Research Laboratory Matsushita Electronics Corporation
-
Shimada Yasuhiro
Electronics Research Laboratory Matsushita Electronice Corporation
-
Sumi Tatsumi
Kyoto Research Laboratory Matsushita Electronics Corporation
-
Hirano Kanji
Kyoto Research Laboratory Matsushita Electronics Corporation
-
Mikawa Takumi
Kyoto Research Laboratory Matsushita Electronics Corporation
-
Arita Koji
Electronics Research Laboratory, Matsushita Electronics Corporation, 1-1 Saiwai-cho, Takatsuki, Osaka 569, Japan
-
Nasu Toru
Electronics Research Laboratory, Matsushita Electronics Corporation, 1-1 Saiwai-cho, Takatsuki, Osaka 569, Japan
-
Sumi Tatsumi
Kyoto Research Laboratory, Matsushita Electronics Corporation, 19 Nishikujo-Kasugacho, Minamiku, Kyoto 601, Japan
-
Takeo Masato
Kyoto Research Laboratory, Matsushita Electronics Corporation, 19 Nishikujo-Kasugacho, Minamiku, Kyoto 601, Japan
-
Ito Toyoji
Kyoto Research Laboratory, Matsushita Electronics Corporation, 19 Nishikujo-Kasugacho, Minamiku, Kyoto 601, Japan
-
Hayashi Shin-ichiro
Electronics Research Laboratory, Matsushita Electronics Corporation, 1-1 Saiwai-cho, Takatsuki, Osaka 569, Japan
-
Hirano Kanji
Kyoto Research Laboratory, Matsushita Electronics Corporation, 19 Nishikujo-Kasugacho, Minamiku, Kyoto 601, Japan
-
Matsuda Akihiro
Electronics Research Laboratory, Matsushita Electronics Corporation, 1-1 Saiwai-cho, Takatsuki, Osaka 569, Japan
-
Judai Yuji
Kyoto Research Laboratory, Matsushita Electronics Corporation, 19 Nishikujo-Kasugacho, Minamiku, Kyoto 601, Japan
-
Otsuki Tatsuo
Electronics Research Laboratory, Matsushita Electronics Corporation, 1-1 Saiwai-cho, Takatsuki, Osaka 569, Japan
-
Inoue Atsuo
Electronics Research Laboratory, Matsushita Electronics Corporation, 1-1 Saiwai-cho, Takatsuki, Osaka 569, Japan
-
Nagano Yoshihisa
Electronics Research Laboratory, Matsushita Electronics Corporation, 1-1 Saiwai-cho, Takatsuki, Osaka 569, Japan
-
Shimada Yasuhiro
Electronics Research Laboratory, Matsushita Electronics Corporation, 1-1 Saiwai-cho, Takatsuki, Osaka 569, Japan
関連論文
- Time-Dependent Leakage Current Behavior of Integrated Ba_Sr_TiO_3 Thin Film Capacitors during Stressing
- Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_Sr_TiO_3 Capacitors Integrated in a Silicon Device
- Si LSI Process Technology for Integrating Ferroelectric Capacitors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
- A Digital Neural Network Coprocessor with a Dynamically Reconfigurable Pipeline Architecture (Special Issue on New Architecture LSIs)
- Thermal Aging Effect in Poled Ferroelectric SrBi_2(Ta,Nb)_2O_9 Capacitors
- Voltage Shift Effect on Retention Failure in Ferroelectric Memories
- Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Retention Characteristics of a Ferroelectric Memory Based on SrBi_2(Ta, Nb)_2O_9
- Ferroelectric Nonvolatile Memory Technology and Its Applications
- A BiCMOS Analog Neural Network with Dynamically Updated Weights
- 2 V/12O ns Embedded Flash EEPROM Circuit Technology (Special Issue on ULSI Memory Technology)
- Pressure-Controlled Wavelength Stabilization of a KrF Excimer Laser with Narrowed Bandwidth : Lithography Technology
- Output Characteristics of a KrF Laser Dependent on the F_2 Absorption in Inactive Regions
- Study of Pt Bottom Electrodes using High-Temperature Sputtering for Ferroelectric Memories with SrBi_2Ta_2O_9 (SBTO) Film
- Hot-Carrier Aging Simulations of a Voltage Controlled Oscillator
- Recrystallization Mechanism for Solid Phase Growth of Poly-Si Films on Quartz Substrates : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Network Restoration Algorithm for Multimedia Communication Services and Its Performance Characteristics
- Ferroelectric Nonvolatile Memory Technology (Special Issue on ULSI Memory Technology)
- Ferroelectric Nonvolatile Memory Technology and Its Applications
- Material Optimization of Bismuth Based Mixed Layered Superlattice Ferroelectrics for High Performance FeRAMs
- Ferroelectric Nonvolatile Memory Technology and Its Applications
- Voltage Shift Effect on Retention Failure in Ferroelectric Memories
- Pressure-Controlled Wavelength Stabilization of a KrF Excimer Laser with Narrowed Bandwidth