Voltage Shift Effect on Retention Failure in Ferroelectric Memories
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-09-01
著者
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Shimada Y
Tokyo Inst. Technol. Yokohama Jpn
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SHIMADA Yasuhiro
Electronics Research Laboratory, Matsushita Electronics Corporation
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OTSUKI Tatsuo
Electronics Research Laboratory, Matsushita Electronics Corporation
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AZUMA Masamichi
Electronics Research Laboratory, Matsushita Electronics Corporation
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Otsuki T
Panasonic Technol. Inc. Co Usa
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NAKAO Keisaku
Electronics Research Laboratory, Matsushita Electronics Corporation
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JUDAI Yuji
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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Otsuki Tatsuo
Electronics Research Laboratory Matsushita Electronics Corporation
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