Material Optimization of Bismuth Based Mixed Layered Superlattice Ferroelectrics for High Performance FeRAMs

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• AZUMA Masamichi

  Electronics Research Laboratory, Matsushita Electronics Corporation

• Azuma Masamichi

  Electronics Research Laboratory Matsushita Electronics Corporation

関連論文

• Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_Sr_TiO_3 Capacitors Integrated in a Silicon Device
• Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
• Voltage Shift Effect on Retention Failure in Ferroelectric Memories
• Retention Characteristics of a Ferroelectric Memory Based on SrBi_2(Ta, Nb)_2O_9
• Ferroelectric Nonvolatile Memory Technology and Its Applications
• Material Optimization of Bismuth Based Mixed Layered Superlattice Ferroelectrics for High Performance FeRAMs
• Ferroelectric Nonvolatile Memory Technology and Its Applications
• Voltage Shift Effect on Retention Failure in Ferroelectric Memories

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