Retention Characteristics of a Ferroelectric Memory Based on SrBi_2(Ta, Nb)_2O_9
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-09-30
著者
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Shimada Y
Tokyo Inst. Technol. Yokohama Jpn
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Shimada Yuji
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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SHIMADA Yasuhiro
Electronics Research Laboratory, Matsushita Electronics Corporation
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OTSUKI Tatsuo
Electronics Research Laboratory, Matsushita Electronics Corporation
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AZUMA Masamichi
Electronics Research Laboratory, Matsushita Electronics Corporation
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Otsuki T
Panasonic Technol. Inc. Co Usa
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Azuma M
Electronics Research Laboratory Matsushita Electronics Corporation
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Azuma Masamichi
Electronics Research Laboratory Matsushita Electronics Corporation
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Matsuda Akihiro
Electronics Research Laboratory Matsushita Electronics Corporation
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Nakao Kenji
Faculty Of Engineering Osaka University
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NAKAO Keisaku
Electronics Research Laboratory, Matsushita Electronics Corporation
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MORIWAKI Nobuyuki
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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CHAYA Shigeo
The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation
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CHAYA Shigeo
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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MORIWAKI Nobuyuki
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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嶋田 豊
富山医科薬科大学医学部和漢診療学
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Otsuki Tatsuo
Electronics Research Laboratory Matsushita Electronics Corporation
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Shimada Yasuhiro
Electronics Research Laboratory Matsushita Electronice Corporation
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Nakao K
Electronics Research Laboratory Matsushita Electronics Corporation
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Chaya Shigeo
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Moriwaki Nobuyuki
The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation
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