Ferroelectric Nonvolatile Memory Technology (Special Issue on ULSI Memory Technology)

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概要

• 論文の詳細を見る

• Ferroelectric nonvolatile technology comprises the ferroelectric material technology, the process technology and the circuit technology. Bi based layered Perovskyte ferroelectric material, SrBi_2Ta_2O_9, so called "Y 1," has superior characteristics in terms of endurance and nonvolatile properties, which is confirmed by a 256 kbit ferroelectric nonvolatile memory. Critical issues regarding the ferroelectric process are reviewed. The 1T/1C cell configuration which is essential for a high density memory and the reference voltage generator employed in the 256 k memory are described as is the architecture to reduce the power consumption of the memory.

• 社団法人電子情報通信学会の論文
• 1996-06-25

著者

• Sumi Tatsumi

  Kyoto Rsearch Laboratory Matsushita Electronics Corporation

• Sumi Tatsumi

  Kyoto Research Laboratory Matsushita Electronics Corporation

関連論文

• 2 V/12O ns Embedded Flash EEPROM Circuit Technology (Special Issue on ULSI Memory Technology)
• Ferroelectric Nonvolatile Memory Technology (Special Issue on ULSI Memory Technology)
• Ferroelectric Nonvolatile Memory Technology and Its Applications
• Ferroelectric Nonvolatile Memory Technology and Its Applications

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