Recrystallization Mechanism for Solid Phase Growth of Poly-Si Films on Quartz Substrates : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
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概要
- 論文の詳細を見る
The recrystallization mechanism for solid-phase growth of poly-Si films amorphized by ion implantation on quartz substrates is clarified on the basis of an experimental finding obtained through the TEM observation. It is found that the {110} textured nucleation occurs. The preferential growth in the <112> directions along twin boundaries then leads to the formation of the dendritic structure.
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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FUJII Eiji
Industrial Technology Center of Okayama Prefecture
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FUJII Eiji
Electronics Research Laboratory, Matsushita Electronics Corporation
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UEMOTO Yasuhiro
Electronics Research Laboratory, Matsushita Electronics Corporation
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Kano Gota
Electronics Research Laboratory, Matsushita Electronics Corporation
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Kano G
Electronics Research Laboratory Matsushita Electronics Corporation
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Kano Gota
Electronics Research Laboratory Matsushita Electronics Corporation
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Uemoto Y
Electronics Research Laboratory Matsushita Electronics Corporation
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Uemoto Yasuhiro
Electronics Research Laboratory Matsushita Electronics Corporation
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Fujii Eiji
First Department Of Oral And Maxillofacial Surgery Faculty Of Dentistry Tokyo Medical And Dental Uni
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Fujii Eiji
Research Laboratories Ii Tamanoi Vinegar Co. Ltd.
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NAKAMURA Akira
Electrotechnical Laboratory
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Senda Kohji
Electronics Research Laboratory Matsushita Electronics Corporation
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EMOTO Fumiaki
Electronics Research Laboratory, Matsushita Electronics Corporation
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YAMAMOTO Atsuya
Electronics Research Laboratory, Matsushita Electronics Corporation
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Yamamoto Atsuya
Electronics Research Laboratory Matsushita Electronics Corporation
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Nakamura Akira
Electronics Research Laboratory Matsushita Electronics Corporation
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