Hot-Carrier Aging Simulations of a Voltage Controlled Oscillator

スポンサーリンク

概要

• 論文の詳細を見る

• Hot-carrier degradation of a voltage controlled oscillator (VCO) was investigated by a reliability simulator known as BERT. The appropriate monitor of VCO frequency degradation shifts from the saturated drain current of an NMOSFET to linear drain current with an increase in VCO input voltage. The degradation of the VCO drastically increases with a small reduction in initial oscillation frequency. These results imply the need for an appropriate reliability margin around the standard operating point as well as a performance margin,which cannot be achieved by using conventional drain current monitors.

• 社団法人電子情報通信学会の論文
• 1996-09-25

著者

• TAKEO Masato

  The authors are with ULSI Process Technology Development Center, Matsushita Electronics Corporation

• TAKEO Masato

  Kyoto Research Laboratory, Matsushita Electronics Corporation

• Tatsuuma Ken-ichiro

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Ind. Co. Ltd.

• Koike N

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Ind. Co. Ltd.

• Takeo Masato

  The Authors Are With Ulsi Process Technology Development Center Matsushita Electronics Corporation

• Tatsuuma Kenichiro

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Ind. Co. Ltd.

• KOIKE Norio

  Kyoto Research Laboratory, Matsushita Electronics Corporation

• NISHIMURA Hirokazu

  Kyoto Research Laboratory, Matsushita Electronics Corporation

• MORII Tomoyuki

  Semiconductor Research Center,Matsushita Electric Industrial Co., Ltd.

• TATSUUMA Kenichiro

  Kyoto Research Laboratory, Matsushita Electronics Corporation

• Morii T

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

• Morii Tomoyuki

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

• Nishimura Hirokazu

  Kyoto Research Laboratory Matsushita Electronics Corporation

関連論文

• A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission(Microelectronic Test Structures)
• A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs(Special Issue on Microelectronic Test Structures)
• Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• Ferroelectric Nonvolatile Memory Technology and Its Applications
• Production of L-Leucine from α-Ketoisocaproic Acid by Cell-Free Extract of Euglena gracilis Z
• A Simulation Methodology for Bidirectional Hot-Carrier Degradation in a Static RAM Circuit
• Hot-Carrier Aging Simulations of a Voltage Controlled Oscillator
• Degradation Phenomenon under Low Drain Voltage Stress in p-channel Metal-Oxide-Semiconductor Field-Effect-Transistors
• Ferroelectric Nonvolatile Memory Technology and Its Applications

スポンサーリンク