A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission(<Special Section>Microelectronic Test Structures)
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概要
- 論文の詳細を見る
A test structure and method for two-dimensional analysis of fabrication process variation of MOSFET using a photoemission microscope are presented. Arrays of 20×10 (=200) MOSFETs were successfully measured at a time and evaluated the fluctuation of their characteristics. The fluctuation of hot-carrier-induced photoemission intensity was larger as gate length becomes smaller. Although the intensity fluctuation of photoemission in the same MOSFET was within small range, the fluctuation all over the MOSFET array was relatively large and independent of the position in the array. An estimation method of the gate length fluctuation has been demonstrated with the photoemission intensity distribution analysis.
- 社団法人電子情報通信学会の論文
- 2005-05-01
著者
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MATSUDA Toshihiro
Department of Information Systems Engineering, Toyama Prefectural University
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IWATA Hideyuki
Department of Information Systems Engineering, Toyama Prefectural University
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OHZONE Takashi
Dawn Enterprise Co., LTD.
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Takeuchi Hiroaki
Department of Oral Health, National Institute of Public Health
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Matsuda T
Department Of Information Systems Engineering Toyama Prefectural University
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OHZONE Takashi
Okayama Prefectural University
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MURAMATSU Akira
Department of Electronics and Informatics, Toyama Prefectural University
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YAMASHITA Kyoji
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Ind. Co., Ltd
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KOIKE Norio
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Ind. Co., Ltd
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TATSUUMA Kenichiro
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Ind. Co., Ltd
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Takeuchi Hiroaki
Department Of Neurosurgery Faculty Of Medical Sciences University Of Fukui
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Matsuda Toshihiro
Department Of Information Systems Engineering Toyama Prefectural University
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Matsuda T
Department Of Electronics And Informatics Toyama Prefectural University
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Tatsuuma Ken-ichiro
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Ind. Co. Ltd.
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Koike N
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Ind. Co. Ltd.
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Koike Norio
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Ohzone T
Dawn Enterprise Co. Ltd.
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Iwata H
Department Of Information Systems Engineering Toyama Prefectural University
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Iwata Hideyuki
Department Of Electronics And Informatics Toyama Prefectural University
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Tatsuuma Kenichiro
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Ind. Co. Ltd.
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Yamashita Kyoji
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Ind. Co. Ltd.
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Yamashita Kyoji
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Muramatsu Akira
Department Of Electronics And Informatics Toyama Prefectural University
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Takeuchi Hiroaki
Department Of Clinical Laboratory Medicine Kochi Medical School
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Takeuchi Hiroaki
Department Of Electronics And Informatics Toyama Prefectural University
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Takeuchi Hiroaki
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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Matsuda Toshihiro
Department of Electronics and Informatics, Toyama Prefectural University, 5180 Kurokawa, Imizu, Toyama 939-0398, Japan
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Matsuda Toshihiro
Department of Electronics and Informatics, Toyama Prefectural University
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