A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs(Special Issue on Microelectronic Test Structures)
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概要
- 論文の詳細を見る
A new test structure, which has a 0.5μm line and space polysilicon pattern of which center is aligned on the MOSFET's gate center, is proposed for hot-carrier-induced photoemission analysis in subquarter micron devices. The photoemission-intensity profiles were measured using the photoemission microscope with a liquid N_2 cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of MOSFET's gate with a spatial resolution sufficiently less than ±24nm at the microscope magnification of 1000×. The test structure is useful to study the photoemission effects in semiconductor devices.
- 社団法人電子情報通信学会の論文
- 2002-05-01
著者
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MATSUDA Toshihiro
Department of Information Systems Engineering, Toyama Prefectural University
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OHZONE Takashi
Dawn Enterprise Co., LTD.
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Matsuda T
Department Of Information Systems Engineering Toyama Prefectural University
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YAMASHITA Kyoji
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Ind. Co., Ltd
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KOIKE Norio
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Ind. Co., Ltd
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MATSUDA Toshihiro
the Department of Electronics and Informatics, Toyama Prefectural University
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OHZONE Takashi
the Department of Electronics and Informatics, Toyama Prefectural University
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FUNADA Mari
The Department of Electronics and Informatics, Toyama Prefectural University
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KAMEDA Etsumasa
The Department of Electrical Engineering, Toyama National College of Technology
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ODANAKA Shinji
Cybermedia Center, Osaka University
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TATSUUMA Ken-ichiro
ULSI Process Technology Development Center, Semiconductor Co.
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Funada Mari
The Department Of Electronics And Informatics Toyama Prefectural University
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Odanaka S
Cybermedia Center Osaka University
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Odanaka Shinji
Semiconductor Research Center Matsushita Electric Ind.co.
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Matsuda Toshihiro
Department Of Information Systems Engineering Toyama Prefectural University
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Matsuda T
Department Of Electronics And Informatics Toyama Prefectural University
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Kameda E
The Department Of Electrical Engineering Toyama National College Of Technology
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Tatsuuma Ken-ichiro
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Ind. Co. Ltd.
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Koike N
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Ind. Co. Ltd.
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Koike Norio
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Ohzone T
Dawn Enterprise Co. Ltd.
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Tatsuuma Kenichiro
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Ind. Co. Ltd.
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Yamashita Kyoji
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Ind. Co. Ltd.
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Yamashita Kyoji
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Kameda Etsumasa
The Department Of Electrical Engineering Toyama National College Of Technology
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