Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide

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概要

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• MOS capacitors with Si-implanted thermal oxide and CVD deposited oxide of 30nm thickness were fabricated for applications of non-volatile memory and electroluminescence devices. Current-voltage (I-V) and I-V hysteresis characteristics were measured, and the hysteresis window (HW) and the integrated charge of HW (ICHW) extracted from the hysteresis data were discussed. The HW characteristics of high Si dose samples showed the asymmetrical double-peaks curves with the hump in both tails. The ICHW almost converged after the 4th cycle and had the voltage sweep speed dependence. All +ICHW and -ICHW characteristics were closely related to the static (+I)-(+VG) and (-I)-(-VG) curves, respectively. For the high Si dose samples, the clear hump currents in the static I-VG characteristics contribute to lower the rising voltage and to steepen the ICHW increase, which correspond to the large stored charge in the oxide.

著者

• MATSUDA Toshihiro

  Department of Information Systems Engineering, Toyama Prefectural University

• ISHIMARU Shinsuke

  Department of Information Systems Engineering, Toyama Prefectural University

• NOHARA Shingo

  Department of Information Systems Engineering, Toyama Prefectural University

• IWATA Hideyuki

  Department of Information Systems Engineering, Toyama Prefectural University

• KOMOKU Kiyotaka

  Department of Communication Engineering, Okayama Prefectural University

• MORISHITA Takayuki

  Department of Communication Engineering, Okayama Prefectural University

• OHZONE Takashi

  Dawn Enterprise Co., LTD.

• Matsuda T

  Department Of Information Systems Engineering Toyama Prefectural University

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