A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs (Special Issue on Microelectronic Test Structures)
スポンサーリンク
概要
- 論文の詳細を見る
Profiles of photoemission induced by hot electrons in LDD-type n-MOSFETS with L=0.35-2.0μm were measured with a photoemission microscope, which had a capability of 1000× magnification and a spatial resolution of 27 nm/pixel on a CCD imager sufficient to detect profile changes in the channel length direction. Under the bias condition of maximum sub-strate current, photoemission peaks were located at the LDD-drain edge and the n^+-drain edge for the devices with L=0.35 and L≧0.40μm, respectively. A peak position, only in the case of the 0.35μm device, shifted toward the drain side by about 80 nm at V_D=7.0 V. Since V_D did not affect peak positions in L≧0.40μm devices, the photoemission mechanisms may be different between L=0.35μm and L≧0.40μm devices. The photoemission points due to p-n junction breakdown were located at the cylindrical curvature edge of the n^+-drain region. Two-dimensional device simulation, even when the lateral electric field, electron temperature and radiative recombination rate were taken into account, could not explain the experimental results completely.
- 社団法人電子情報通信学会の論文
- 1999-04-25
著者
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MATSUDA Toshihiro
Department of Information Systems Engineering, Toyama Prefectural University
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OHZONE Takashi
Dawn Enterprise Co., LTD.
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Matsuda T
Department Of Information Systems Engineering Toyama Prefectural University
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OHZONE Takashi
Department of Communication Engineering, Okayama Prefectural University
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KAMEDA Etsumasa
The Department of Electrical Engineering, Toyama National College of Technology
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MATSUYAMA Naoko
Department of Electronics and Informatics, Toyama Prefectural University
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HOSOI Kiyomi
Department of Electronics and Informatics, Toyama Prefectural University
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KAMEDA Etsumasa
Department of Electrical Engineering, Toyama National College of Technology
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Hosoi Kiyomi
Department Of Electronics And Informatics Toyama Prefectural University
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Matsuda Toshihiro
Department Of Information Systems Engineering Toyama Prefectural University
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Matsuda T
Department Of Electronics And Informatics Toyama Prefectural University
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Kameda E
The Department Of Electrical Engineering Toyama National College Of Technology
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Matsuyama Naoko
Department Of Electronics And Informatics Toyama Prefectural University
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Matsuyama Naoko
Department Of Electronics And Informatics Toyama Prefectual University
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Ohzone T
Dawn Enterprise Co. Ltd.
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Ohzone Takashi
Department Of Communication Engineering Okayama Prefectural University
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Matsuda Toshihiro
Department of Electronics and Informatics, Toyama Prefectural University, 5180 Kurokawa, Imizu, Toyama 939-0398, Japan
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Matsuda Toshihiro
Department of Electronics and Informatics, Toyama Prefectural University
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