Ohzone Takashi | Department Of Communication Engineering Okayama Prefectural University

スポンサーリンク

概要

関連著者

もっと見る

著作論文

A CMOS Temperature Sensor Circuit(Integrated Electronics)
A Test Structure to Analyze Electrical CMOSFET Reliabilities between Center and Edge along the Channel Width(Semiconductor Materials and Devices)
A Test Structure to Analyze Highly-Doped-Drain and Lightly-Doped-Drain in CMOSFET(Semiconductor Materials and Devices)
Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate
Impact of Image and Exchange-Correlation Effects on Ballistic Electron Transport in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors
Quantum-Mechanical Simulation of Counter Doped Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Single Work Function Metal Gate
Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n^+-Polysilicon Gates
A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs (Special Issue on Microelectronic Test Structures)
Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach (Special Issue on SOI Devices and Their Process Technologies)
Photocarrier Generation Rate Model of Textured Silicon Solar Cells
Transport Equations for Homogeneous and Variable-Composition Semiconductor Devices at Low Temperature
Impact of Surface Band Bending at the Rear Si-SiO_2 Interface on Conversion Efficiency of Rear Locally-Contacted Silicon Solar Cells
Reduction of A Surge-Pulse by A New CMOS-type Diode
The Influence of Megnetic Plugging on RF Plasma Density
A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS and Trench-Isolated MOSFETs
Numerical Simulation of Silicon-on-Insulator Thin-Film Solar Cells
C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO_2
Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90゜and 45゜ (Special Issue on Microelectronic Test Structure)
Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal-Oxide-Semiconductor Transistors
An Accurate and Computationally Efficient Method for Device Simulation with Scattering in Nanoscale Double-Gate Metal–Oxide–Semiconductor Transistors
Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal–Oxide–Semiconductor Transistors
Impact of Surface Band Bending at the Rear Si–SiO2 Interface on Conversion Efficiency of Rear Locally-Contacted Silicon Solar Cells

もっと見る

スポンサーリンク