A Test Structure to Analyze Electrical CMOSFET Reliabilities between Center and Edge along the Channel Width(Semiconductor Materials and Devices)

概要

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A test structure to separately analyze the location where the hot-carrier-induced CMOSFET reliability is determined around the center or the isolation-edge along the channel-width was proposed and fabricated. The test structure has four kinds of MOSFETs; [A] and [D] MOSFETs with a short and a long channel-length all over the channel width, respectively, [B] MOSFET with the short and the long channel-length around the center and the both isolation-edges, respectively, and [C] MOSFET with the channel-length regions vice versa to the [B] MOSFET. The time dependent changes of the threshold voltages V_T, the saturation currents I_S, the linear currents I_L and the maximum transconductances β up to 50,000s were measured. All data for the wide channel-width MOSFETs were almost categorized into three; [A], [B]/[C] and [D]. The [B]/[C] data were well estimated from simple theoretical discussions by the combination of [A] and [D] data, which mean that the reliabilities are nearly the same around the center or the isolation-edge for the CMOSFETs.
社団法人電子情報通信学会の論文
2007-02-01